Taiwan semiconductor manufacturing co., ltd. (20240096431). MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract
Contents
- 1 MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chun-Hao Chang of Hsinchu (TW)
MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096431 titled 'MEMORY CIRCUIT AND METHOD OF OPERATING SAME
Simplified Explanation
The memory circuit described in the abstract includes a non-volatile memory cell, a comparator, and a detection circuit. The comparator generates an output signal based on the voltage received from the memory cell, while the detection circuit latches the output signal and disrupts the current path between the memory cell and the comparator.
- Non-volatile memory cell
- Comparator with input and output terminals
- Detection circuit latching the output signal
- First inverter in the detection circuit
Potential Applications
This technology could be used in:
- Embedded systems
- IoT devices
- Wearable technology
Problems Solved
This technology helps in:
- Efficient memory management
- Low power consumption
- Reliable data storage
Benefits
The benefits of this technology include:
- Improved data retention
- Faster data access
- Reduced energy consumption
Potential Commercial Applications
This technology could be applied in:
- Smartphones
- Smart home devices
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be:
- Memory circuits with latching capabilities
Unanswered Questions
How does this technology compare to traditional memory circuits in terms of speed and reliability?
This article does not provide a direct comparison between this technology and traditional memory circuits in terms of speed and reliability.
What are the specific design considerations for implementing this technology in different types of electronic devices?
This article does not delve into the specific design considerations for implementing this technology in various electronic devices.
Original Abstract Submitted
a memory circuit includes a non-volatile memory cell, a comparator and a detection circuit. the comparator is coupled to the non-volatile memory cell, and configured to generate a first output signal. the comparator including a first input terminal and a first output terminal. the first input terminal is coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage. the first output terminal is configured to output the first output signal. the detection circuit is coupled to the comparator and the non-volatile memory cell. the detection circuit is configured to latch the first output signal and disrupt a current path between at least the non-volatile memory cell and the comparator. the detection circuit includes a first inverter coupled to the first output terminal of the comparator and configured to generate an inverted first output signal.
