Taiwan semiconductor manufacturing co., ltd. (20240096400). MEMORY DEVICE SENSE AMPLIFIER CONTROL simplified abstract

MEMORY DEVICE SENSE AMPLIFIER CONTROL

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chien-Yuan Chen of Hsinchu City (TW)

Hau-Tai Shieh of Hsinchu City (TW)

Cheng Hung Lee of Hsinchu (TW)

MEMORY DEVICE SENSE AMPLIFIER CONTROL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096400 titled 'MEMORY DEVICE SENSE AMPLIFIER CONTROL

Simplified Explanation

The memory device described in the abstract consists of various latches and lines that enable the storage and retrieval of data in a memory bank. Here is a simplified explanation of the patent application:

• Memory device with memory bank, memory cell, local bit line, and word line
• First local data latch connected to local bit line, with enable terminal for first local clock signal
• Word line latch latches word line select signal, with enable terminal for second local clock signal
• First global data latch connected to first local data latch via global bit line, with enable terminal for global clock signal
• Global address latch connected to word line latch, with enable terminal for global clock signal
• Bank select latch latches bank select signal, with enable terminal for second local clock signal

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1. 1. 1. Potential Applications of this Technology

1. Computer memory systems 2. Data storage devices

1. 1. 1. Problems Solved by this Technology

1. Efficient data storage and retrieval 2. Improved memory access speed

1. 1. 1. Benefits of this Technology

1. Faster data processing 2. Enhanced memory performance

1. 1. 1. Potential Commercial Applications of this Technology
         1. Optimizing Memory Systems for Improved Performance

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1. 1. 1. Possible Prior Art

There may be existing patents or technologies related to memory devices with similar latch and line configurations for data storage and retrieval.

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1. 1. 1. 1. Unanswered Questions

1. 1. 1. How does this memory device compare to other existing memory technologies in terms of speed and efficiency?

This article does not provide a direct comparison with other memory technologies, leaving a gap in understanding the competitive advantages of this specific memory device.

1. 1. 1. What are the potential limitations or drawbacks of implementing this memory device in practical applications?

The article does not address any potential challenges or limitations that may arise when integrating this memory device into real-world systems, leaving room for further exploration into its feasibility and scalability.

Original Abstract Submitted

a memory device includes a memory bank with a memory cell connected to a local bit line and a word line. a first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. a word line latch is configured to latch a word line select signal, and has an enable terminal configured to receive a second local clock signal. a first global data latch is connected to the first local data latch by a global bit line, and the first global data latch has an enable terminal configured to receive a global clock signal. a global address latch is connected to the word line latch and has an enable terminal configured to receive the global clock signal. a bank select latch is configured to latch a bank select signal, and has an enable terminal configured to receive the second local clock signal.