Taiwan semiconductor manufacturing co., ltd. (20240096386). MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Yi-Ching Liu of Hsinchu (TW)

Chia-En Huang of Hsinchu (TW)

Yih Wang of Hsinchu (TW)

MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096386 titled 'MEMORY CIRCUIT AND METHOD OF OPERATING SAME

Simplified Explanation

The memory circuit described in the abstract consists of multiple memory cells and transistors arranged on different layers, with bit lines and source lines connecting them. Here is a simplified explanation of the abstract:

• The memory circuit includes a first memory cell on one layer, a second memory cell on a different layer, and a select transistor on yet another layer.
• A first bit line connects the first and second memory cells.
• A first source line connects the first and second memory cells as well as the select transistor.
• A second source line connects to the select transistor.

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1. 1. 1. Potential Applications of this Technology

• Data storage in electronic devices
• Memory modules in computers

1. 1. 1. Problems Solved by this Technology

• Efficient memory access
• Compact memory design

1. 1. 1. Benefits of this Technology

• Faster data retrieval
• Increased memory capacity

1. 1. 1. Potential Commercial Applications of this Technology
         1. Enhanced Memory Circuits for Next-Generation Devices

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1. 1. 1. Possible Prior Art

There may be existing patents or publications related to multi-layer memory circuits or similar memory cell arrangements. One example could be a patent for a memory circuit with stacked memory cells.

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1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this memory circuit compare to traditional memory designs in terms of speed and efficiency?

This article does not provide a direct comparison with traditional memory designs, leaving the reader to speculate on the potential advantages of this new circuit.

1. 1. 1. 1. Are there any limitations or drawbacks to implementing this multi-layer memory circuit in practical applications?

The article does not address any potential limitations or challenges that may arise when implementing this technology, leaving room for further investigation into its feasibility and practicality.

Original Abstract Submitted

a memory circuit includes a first memory cell on a first layer, a second memory cell on a second layer different from the first layer, a first select transistor on a third layer different from the first layer and the second layer, and a first bit line extending in a first direction, and being coupled to the first memory cell and the second memory cell. the memory circuit further includes a first source line extending in the first direction, being coupled to the first memory cell, the second memory cell and the first select transistor, and being separated from the first bit line in a second direction different from the first direction. memory circuit includes a second source line extending in the first direction, and being coupled to the first select transistor.