Taiwan semiconductor manufacturing co., ltd. (20240096383). MEMORY DEVICE simplified abstract

MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096383 titled 'MEMORY DEVICE

Simplified Explanation

The memory device described in the abstract includes two SRAM cells and a first metal layer. The first SRAM cell consists of two write-port pull-up transistors and two read-port transistors arranged in the y-direction, while the second SRAM cell consists of two write-port pull-up transistors and two read-port transistors also arranged in the y-direction. The first metal layer extends in the y-direction and is shared by both SRAM cells.

• The memory device includes two SRAM cells and a first metal layer.
• Each SRAM cell has write-port pull-up transistors and read-port transistors arranged in the y-direction.
• The first metal layer extends in the y-direction and is shared by both SRAM cells.

Potential Applications

The technology described in this patent application could be applied in:

• Computer memory systems
• Embedded systems
• Mobile devices

Problems Solved

This technology helps in:

• Improving memory access speed
• Reducing power consumption
• Enhancing memory density

Benefits

The benefits of this technology include:

• Faster data retrieval
• Lower energy consumption
• Increased memory capacity

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor industry
• Consumer electronics
• Telecommunications

Possible Prior Art

One possible prior art for this technology could be:

• Previous SRAM memory designs
• Metal layer configurations in memory devices

Unanswered Questions

How does this technology compare to traditional SRAM memory designs?

This article does not provide a direct comparison between this technology and traditional SRAM memory designs.

What are the specific power consumption savings achieved by this innovation?

The article does not specify the exact power consumption savings achieved by this innovation.

Original Abstract Submitted

a memory device includes a first static random access memory (sram) cell, a second sram cell, and a first metal layer. the first sram cell includes a first write-port pull-up (pu) transistor and a second write-port pu transistor arranged in a y-direction, and a first read-port pd transistor and a first read-port pg transistor. the second sram cell includes a third write-port pu transistor and a fourth write-port pu transistor arranged in the y-direction, and a second read-port pd transistor and a second read-port pg transistor. the first and second read-port pd transistors and the first and second read-port pg transistors are arranged in the y-direction. the first metal layer is over the first sram cell and the second sram cell. the first metal layer includes a read bit-line conductor extending in the y-direction and shared by the first sram cell and the second sram cell.