Taiwan semiconductor manufacturing co., ltd. (20240095438). METHOD OF MAKING INTEGRATED CIRCUIT WITH ASYMMETRIC MIRRORED LAYOUT ANALOG CELLS simplified abstract

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METHOD OF MAKING INTEGRATED CIRCUIT WITH ASYMMETRIC MIRRORED LAYOUT ANALOG CELLS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Yu-Tao Yang of Hsinchu (TW)

Wen-Shen Chou of Hsinchu (TW)

Yung-Chow Peng of Hsinchu (TW)

METHOD OF MAKING INTEGRATED CIRCUIT WITH ASYMMETRIC MIRRORED LAYOUT ANALOG CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240095438 titled 'METHOD OF MAKING INTEGRATED CIRCUIT WITH ASYMMETRIC MIRRORED LAYOUT ANALOG CELLS

Simplified Explanation

The patent application describes a device with asymmetrically positioned cell active areas in different device columns, with varying lengths and distances from barrier lines.

  • The device includes a first cell active area and a second cell active area positioned in different device columns.
  • The first cell has a length three times greater than the second cell in a perpendicular direction to the barrier line.
  • Both cell active areas are a certain distance from the first barrier line, with the first cell active area being a different distance from the second barrier line compared to the second cell active area.

Potential Applications

This technology could be applied in:

  • Display screens
  • Touchscreen devices
  • Semiconductor devices

Problems Solved

This technology helps in:

  • Optimizing space in devices
  • Improving display quality
  • Enhancing touch sensitivity

Benefits

The benefits of this technology include:

  • Increased efficiency in device design
  • Enhanced performance in electronic devices
  • Improved user experience

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

  • Smartphone manufacturing
  • Tablet production
  • Computer display development

Possible Prior Art

One possible prior art could be:

  • Previous patents related to asymmetrically positioned cell active areas in electronic devices

Unanswered Questions

How does this technology impact device durability?

The article does not address the potential impact of this technology on the durability of devices. Further research or testing may be needed to determine this aspect.

Are there any limitations to the size of devices that can incorporate this technology?

The article does not mention any limitations regarding the size of devices that can utilize this technology. It would be important to investigate whether there are any constraints in this regard.


Original Abstract Submitted

a device includes a first cell active area asymmetrically positioned in a first device column between a first barrier line and a second barrier line, a second cell active area asymmetrically positioned in a second device column between the first barrier line and a third barrier line, where the first cell has a first cell length in a first direction perpendicular to the first barrier line which is three times a second cell length in the first direction. the first cell active area and the second cell active area are a first distance from the first barrier line, and the first cell active area is a second distance from the second barrier line, and the second cell active area is the second distance away from the third barrier line.