Taiwan semiconductor manufacturing co., ltd. (20240094629). PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF simplified abstract
Contents
- 1 PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chao-Ching Cheng of Hsinchu City (TW)
PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240094629 titled 'PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
Simplified Explanation
The abstract describes a pellicle for an EUV photo mask that includes a first layer, a second layer, and a main layer with nanotubes. At least one of the layers contains a two-dimensional material with stacked layers.
- The pellicle for an EUV photo mask includes a first layer, a second layer, and a main layer with nanotubes.
- One of the layers contains a two-dimensional material with stacked layers.
Potential Applications
The technology could be used in the semiconductor industry for lithography processes, specifically in EUV photomasks.
Problems Solved
1. Protecting EUV photo masks from damage during lithography processes. 2. Enhancing the durability and performance of EUV photo masks.
Benefits
1. Improved protection for EUV photo masks. 2. Increased longevity and reliability of EUV photo masks. 3. Enhanced quality and precision in semiconductor manufacturing processes.
Potential Commercial Applications
Optimizing lithography processes in semiconductor manufacturing for improved efficiency and quality control.
Possible Prior Art
Previous patents or research on pellicles for EUV photo masks, nanotube-based materials in lithography, and two-dimensional materials in semiconductor applications.
Unanswered Questions
How does the presence of nanotubes in the main layer impact the performance of the pellicle?
The abstract mentions nanotubes in the main layer, but does not elaborate on their specific role or function in the pellicle.
Are there any limitations or drawbacks to using two-dimensional materials in the first and second layers?
While the abstract highlights the use of two-dimensional materials in the layers, it does not discuss any potential challenges or constraints associated with this choice.
Original Abstract Submitted
a pellicle for an euv photo mask includes a first layer; a second layer; and a main layer disposed between the first layer and second layer and including a plurality of nanotubes. at least one of the first layer or the second layer includes a two-dimensional material in which one or more two-dimensional layers are stacked. in one or more of the foregoing and following embodiments, the first layer includes a first two-dimensional material and the second layer includes a second two-dimensional material.
