Taiwan semiconductor manufacturing co., ltd. (20240094626). PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
- 1 PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wei-Hao Lee of Taipei City (TW)
Huan-Ling Lee of Hsinchu City (TW)
Hsin-Chang Lee of Zhubei City (TW)
Chin-Hsiang Lin of Hsinchu (TW)
PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240094626 titled 'PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The abstract describes a patent application for a pellicle used in extreme ultraviolet (EUV) photomasks, which includes a pellicle frame and a main membrane with nanotubes covered by a coating layer containing Si and metal elements.
- The pellicle for an EUV photomask includes a pellicle frame and a main membrane.
- The main membrane consists of nanotubes covered by a coating layer containing Si and metal elements.
Potential Applications
The technology can be applied in the manufacturing of extreme ultraviolet (EUV) photomasks used in semiconductor fabrication.
Problems Solved
The pellicle helps protect the photomask from contamination and damage during the manufacturing process, ensuring the quality and accuracy of the final semiconductor products.
Benefits
- Enhanced protection for EUV photomasks - Improved quality and accuracy of semiconductor fabrication processes
Potential Commercial Applications
Optimizing Extreme Ultraviolet (EUV) Photomask Manufacturing Process
Possible Prior Art
There may be prior art related to the use of nanotubes in pellicles for photomasks, but specific examples are not provided in the abstract.
Unanswered Questions
How does the coating layer improve the performance of the pellicle in protecting the photomask during the manufacturing process?
The coating layer containing Si and metal elements may provide additional durability and resistance to contamination, but the specific mechanisms are not detailed in the abstract.
What are the potential challenges or limitations of implementing this technology in semiconductor fabrication processes?
While the pellicle technology offers benefits in protecting photomasks, there may be challenges related to scalability, cost-effectiveness, and integration into existing manufacturing processes.
Original Abstract Submitted
a pellicle for an extreme ultraviolet (euv) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. the main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing si and one or more metal elements.
