Taiwan semiconductor manufacturing co., ltd. (20240094464). PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE simplified abstract

PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Eugene I-Chun Chen of Taipei City (TW)

Kuan-Liang Liu of Pingtung City (TW)

De-Yang Chiou of Hsinchu City (TW)

Yung-Lung Lin of Taichung City (TW)

Chia-Shiung Tsai of Hsin-Chu (TW)

PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240094464 titled 'PHOTONIC SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING THE PHOTONIC SOI SUBSTRATE

Simplified Explanation

The abstract describes a method for forming a semiconductor-on-insulator (SOI) structure, involving the bonding of a first dielectric layer under a second semiconductor layer in a low-pressure environment, followed by the formation of additional semiconductor layers and a planarization process to reduce variations in distance between layers.

• Formation of a first dielectric layer on a first semiconductor layer
• Bonding the first dielectric layer under a second semiconductor layer in a low-pressure environment
• Formation of additional semiconductor layers and an index guiding layer
• Planarization process to reduce variations in distance between layers

Potential Applications

The SOI structure can be used in the manufacturing of high-performance semiconductor devices, such as advanced integrated circuits, sensors, and microprocessors.

Problems Solved

1. Reduced parasitic capacitance between semiconductor layers 2. Improved device performance and reliability due to reduced variations in layer distances

Benefits

1. Enhanced electrical performance of semiconductor devices 2. Increased integration density on a chip 3. Improved thermal management due to optimized layer structure

Potential Commercial Applications

"Advanced Semiconductor Devices: Enhancing Performance with SOI Structures"

Possible Prior Art

Prior art may include methods for forming SOI structures using different bonding techniques or materials, as well as processes for planarizing semiconductor layers in device manufacturing.

Unanswered Questions

What specific semiconductor materials are used in the SOI structure described in the patent application?

The abstract does not provide details on the semiconductor materials used in the SOI structure. Further information on the specific materials could help understand the performance characteristics of the resulting devices.

How does the planarization process impact the overall cost of manufacturing semiconductor devices with the described SOI structure?

The abstract mentions a planarization process to reduce variations in layer distances, but it does not discuss the potential cost implications of this additional step. Understanding the cost-effectiveness of the manufacturing process could be crucial for commercial adoption.

Original Abstract Submitted

a semiconductor-on-insulator (soi) structure and a method for forming the soi structure. the method includes forming a first dielectric layer on a first semiconductor layer. a second semiconductor layer is formed over an etch stop layer. a cleaning solution is provided to a first surface of the first dielectric layer. the first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. an index guiding layer may be formed over the second semiconductor layer. a third semiconductor layer is formed over the second semiconductor layer. a distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. a planarization process is performed on the third semiconductor layer to reduce the maximum distance.