Difference between revisions of "Taiwan Semiconductor Manufacturing Company Limited patent applications published on November 30th, 2023"
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==Patent applications for Taiwan Semiconductor Manufacturing Company Limited on November 30th, 2023== | ==Patent applications for Taiwan Semiconductor Manufacturing Company Limited on November 30th, 2023== | ||
− | ===Systems and Methods for Classifying PUF Signature Modules of Integrated Circuits ([[US Patent Application 18446838. Systems and Methods for Classifying PUF Signature Modules of Integrated Circuits simplified abstract|18446838]])=== | + | ===Systems and Methods for Classifying PUF Signature Modules of Integrated Circuits ([[US Patent Application 18446838. Systems and Methods for Classifying PUF Signature Modules of Integrated Circuits simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18446838]])=== |
Line 30: | Line 9: | ||
− | ===Mixed Poly Pitch Design Solution for Power Trim ([[US Patent Application 18361948. Mixed Poly Pitch Design Solution for Power Trim simplified abstract|18361948]])=== | + | ===Mixed Poly Pitch Design Solution for Power Trim ([[US Patent Application 18361948. Mixed Poly Pitch Design Solution for Power Trim simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18361948]])=== |
Line 38: | Line 17: | ||
− | ===INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME ([[US Patent Application 17898834. INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract|17898834]])=== | + | ===INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME ([[US Patent Application 17898834. INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|17898834]])=== |
Line 46: | Line 25: | ||
− | ===PACKAGING SUBSTRATE INCLUDING A STRESS-ABSORPTION TRENCH AND METHODS OF FORMING THE SAME ([[US Patent Application 17828064. PACKAGING SUBSTRATE INCLUDING A STRESS-ABSORPTION TRENCH AND METHODS OF FORMING THE SAME simplified abstract|17828064]])=== | + | ===PACKAGING SUBSTRATE INCLUDING A STRESS-ABSORPTION TRENCH AND METHODS OF FORMING THE SAME ([[US Patent Application 17828064. PACKAGING SUBSTRATE INCLUDING A STRESS-ABSORPTION TRENCH AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|17828064]])=== |
Line 54: | Line 33: | ||
− | ===SEMICONDUCTOR PACKAGE INCLUDING LID WITH INTEGRATED HEAT PIPE FOR THERMAL MANAGEMENT AND METHODS FOR FORMING THE SAME ([[US Patent Application 18366788. SEMICONDUCTOR PACKAGE INCLUDING LID WITH INTEGRATED HEAT PIPE FOR THERMAL MANAGEMENT AND METHODS FOR FORMING THE SAME simplified abstract|18366788]])=== | + | ===SEMICONDUCTOR PACKAGE INCLUDING LID WITH INTEGRATED HEAT PIPE FOR THERMAL MANAGEMENT AND METHODS FOR FORMING THE SAME ([[US Patent Application 18366788. SEMICONDUCTOR PACKAGE INCLUDING LID WITH INTEGRATED HEAT PIPE FOR THERMAL MANAGEMENT AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18366788]])=== |
Line 62: | Line 41: | ||
− | ===SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME ([[US Patent Application 18230135. SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract|18230135]])=== | + | ===SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME ([[US Patent Application 18230135. SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18230135]])=== |
Line 70: | Line 49: | ||
− | ===REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME ([[US Patent Application 17826223. REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME simplified abstract|17826223]])=== | + | ===REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME ([[US Patent Application 17826223. REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|17826223]])=== |
Line 78: | Line 57: | ||
− | ===SEMICONDUCTOR PACKAGE WITH VARIABLE PILLAR HEIGHT AND METHODS FOR FORMING THE SAME ([[US Patent Application 17828066. SEMICONDUCTOR PACKAGE WITH VARIABLE PILLAR HEIGHT AND METHODS FOR FORMING THE SAME simplified abstract|17828066]])=== | + | ===SEMICONDUCTOR PACKAGE WITH VARIABLE PILLAR HEIGHT AND METHODS FOR FORMING THE SAME ([[US Patent Application 17828066. SEMICONDUCTOR PACKAGE WITH VARIABLE PILLAR HEIGHT AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|17828066]])=== |
Line 86: | Line 65: | ||
− | ===DIE CORNER REMOVAL FOR UNDERFILL CRACK SUPPRESSION IN SEMICONDUCTOR DIE PACKAGING ([[US Patent Application 18446554. DIE CORNER REMOVAL FOR UNDERFILL CRACK SUPPRESSION IN SEMICONDUCTOR DIE PACKAGING simplified abstract|18446554]])=== | + | ===DIE CORNER REMOVAL FOR UNDERFILL CRACK SUPPRESSION IN SEMICONDUCTOR DIE PACKAGING ([[US Patent Application 18446554. DIE CORNER REMOVAL FOR UNDERFILL CRACK SUPPRESSION IN SEMICONDUCTOR DIE PACKAGING simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18446554]])=== |
Line 94: | Line 73: | ||
− | ===VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME ([[US Patent Application 18230147. VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME simplified abstract|18230147]])=== | + | ===VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME ([[US Patent Application 18230147. VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18230147]])=== |
Line 102: | Line 81: | ||
− | ===Device with a High Efficiency Voltage Multiplier ([[US Patent Application 18447367. Device with a High Efficiency Voltage Multiplier simplified abstract|18447367]])=== | + | ===Device with a High Efficiency Voltage Multiplier ([[US Patent Application 18447367. Device with a High Efficiency Voltage Multiplier simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18447367]])=== |
Line 110: | Line 89: | ||
− | ===SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE ([[US Patent Application 18232085. SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE simplified abstract|18232085]])=== | + | ===SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE ([[US Patent Application 18232085. SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18232085]])=== |
Line 118: | Line 97: | ||
− | ===FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME ([[US Patent Application 18363217. FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME simplified abstract|18363217]])=== | + | ===FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME ([[US Patent Application 18363217. FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18363217]])=== |
Line 126: | Line 105: | ||
− | ===SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING ([[US Patent Application 18231847. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING simplified abstract|18231847]])=== | + | ===SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING ([[US Patent Application 18231847. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18231847]])=== |
Line 134: | Line 113: | ||
− | ===SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME ([[US Patent Application 18446541. SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME simplified abstract|18446541]])=== | + | ===SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME ([[US Patent Application 18446541. SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18446541]])=== |
Line 142: | Line 121: | ||
− | ===TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME ([[US Patent Application 18230864. TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME simplified abstract|18230864]])=== | + | ===TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME ([[US Patent Application 18230864. TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18230864]])=== |
Line 150: | Line 129: | ||
− | ===RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME ([[US Patent Application 18366725. RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME simplified abstract|18366725]])=== | + | ===RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME ([[US Patent Application 18366725. RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18366725]])=== |
Line 158: | Line 137: | ||
− | ===Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate ([[US Patent Application 18366733. Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate simplified abstract|18366733]])=== | + | ===Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate ([[US Patent Application 18366733. Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18366733]])=== |
Line 166: | Line 145: | ||
− | ===MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS ([[US Patent Application 18446755. MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS simplified abstract|18446755]])=== | + | ===MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS ([[US Patent Application 18446755. MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18446755]])=== |
Line 174: | Line 153: | ||
− | ===MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME ([[US Patent Application 18362192. MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract|18362192]])=== | + | ===MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME ([[US Patent Application 18362192. MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|18362192]])=== |
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− | ===ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME ([[US Patent Application 17826815. ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME simplified abstract|17826815]])=== | + | ===ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME ([[US Patent Application 17826815. ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)|17826815]])=== |
Revision as of 07:04, 5 December 2023
Contents
- 1 Patent applications for Taiwan Semiconductor Manufacturing Company Limited on November 30th, 2023
- 1.1 Systems and Methods for Classifying PUF Signature Modules of Integrated Circuits (18446838)
- 1.2 Mixed Poly Pitch Design Solution for Power Trim (18361948)
- 1.3 INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME (17898834)
- 1.4 PACKAGING SUBSTRATE INCLUDING A STRESS-ABSORPTION TRENCH AND METHODS OF FORMING THE SAME (17828064)
- 1.5 SEMICONDUCTOR PACKAGE INCLUDING LID WITH INTEGRATED HEAT PIPE FOR THERMAL MANAGEMENT AND METHODS FOR FORMING THE SAME (18366788)
- 1.6 SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME (18230135)
- 1.7 REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME (17826223)
- 1.8 SEMICONDUCTOR PACKAGE WITH VARIABLE PILLAR HEIGHT AND METHODS FOR FORMING THE SAME (17828066)
- 1.9 DIE CORNER REMOVAL FOR UNDERFILL CRACK SUPPRESSION IN SEMICONDUCTOR DIE PACKAGING (18446554)
- 1.10 VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME (18230147)
- 1.11 Device with a High Efficiency Voltage Multiplier (18447367)
- 1.12 SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE (18232085)
- 1.13 FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME (18363217)
- 1.14 SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING (18231847)
- 1.15 SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME (18446541)
- 1.16 TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME (18230864)
- 1.17 RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME (18366725)
- 1.18 Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate (18366733)
- 1.19 MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS (18446755)
- 1.20 MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME (18362192)
- 1.21 ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME (17826815)
Patent applications for Taiwan Semiconductor Manufacturing Company Limited on November 30th, 2023
Systems and Methods for Classifying PUF Signature Modules of Integrated Circuits (18446838)
Main Inventor
Cheng-En Lee
Mixed Poly Pitch Design Solution for Power Trim (18361948)
Main Inventor
Shih-Wei Peng
INTEGRATED CHIP PACKAGE INCLUDING A CRACK-RESISTANT LID STRUCTURE AND METHODS OF FORMING THE SAME (17898834)
Main Inventor
Wensen Hung
PACKAGING SUBSTRATE INCLUDING A STRESS-ABSORPTION TRENCH AND METHODS OF FORMING THE SAME (17828064)
Main Inventor
Hsien-Wei Chen
SEMICONDUCTOR PACKAGE INCLUDING LID WITH INTEGRATED HEAT PIPE FOR THERMAL MANAGEMENT AND METHODS FOR FORMING THE SAME (18366788)
Main Inventor
Yu-Sheng LIN
SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME (18230135)
Main Inventor
Jen-Yuan CHANG
REDISTRIBUTION STRUCTURE WITH COPPER BUMPS ON PLANAR METAL INTERCONNECTS AND METHODS OF FORMING THE SAME (17826223)
Main Inventor
Hsien-Wei Chen
SEMICONDUCTOR PACKAGE WITH VARIABLE PILLAR HEIGHT AND METHODS FOR FORMING THE SAME (17828066)
Main Inventor
Li-Ling Liao
DIE CORNER REMOVAL FOR UNDERFILL CRACK SUPPRESSION IN SEMICONDUCTOR DIE PACKAGING (18446554)
Main Inventor
Wei-Yu CHEN
VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME (18230147)
Main Inventor
Jen-Yuan CHANG
Device with a High Efficiency Voltage Multiplier (18447367)
Main Inventor
Yu-Tso Lin
SEMICONDUCTOR ARRANGEMENT WITH ISOLATION STRUCTURE (18232085)
Main Inventor
Feng-Chien HSIEH
FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME (18363217)
Main Inventor
Chun-Chieh LU
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING (18231847)
Main Inventor
Shih-Wei PENG
SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME (18446541)
Main Inventor
Hung Wei LI
TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME (18230864)
Main Inventor
Hung Wei LI
RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND METHODS OF MAKING THE SAME (18366725)
Main Inventor
Gerben Doornbos
Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate (18366733)
Main Inventor
Kam-Tou Sio
MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS (18446755)
Main Inventor
Hui-Hsien WEI
MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME (18362192)
Main Inventor
Chao-I WU
ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING THE SAME (17826815)
Main Inventor
Tsung-Hsueh Yang