Difference between revisions of "Taiwan Semiconductor Manufacturing Company, Ltd. patent applications published on October 12th, 2023"

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'''Summary of the patent applications from Taiwan Semiconductor Manufacturing Company, Ltd. on October 12th, 2023'''
 
 
Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC) has recently filed several patents related to semiconductor devices and memory technologies. These patents cover various aspects of device structures, materials, and fabrication processes. Here is a summary of the recent patents filed by TSMC:
 
 
- Patent 1: A semiconductor device that includes a transistor and an interconnect structure. The interconnect structure consists of multiple interlayer dielectric layers, a via, and a memory cell. The memory cell is connected to the via and positioned over the interlayer dielectric layers.
 
 
- Patent 2: A ferroelectric memory device that includes a bottom electrode, a ferroelectric structure, and a top electrode. The bottom electrode is made of molybdenum.
 
 
- Patent 3: An integrated chip that includes a gate electrode, a gate dielectric layer made of a ferroelectric material, an active structure made of a semiconductor material, and a capping structure made of a metal material.
 
 
- Patent 4: A memory device that includes a word line, a gate dielectric layer, a semiconductor layer, a source line, and a resistance-switchable element. The word line is located on top of a substrate, and the resistance-switchable element is in contact with the semiconductor layer.
 
 
- Patent 5: A ferroelectric memory device that includes multiple layers stacked on a substrate. These layers include conductive and dielectric layers arranged alternately, with a ferroelectric layer placed between them. Oxygen scavenging layers act as a barrier between the ferroelectric layer and the conductive layers.
 
 
- Patent 6: A method for creating a memory device that involves forming stacks of word lines and insulating layers on a semiconductor substrate, creating a data storage layer and a channel layer on the sidewalls of the word line stacks, and forming source/drain contacts.
 
 
- Patent 7: A semiconductor memory device that includes metal lines and memory arrays. Each memory array includes two sets of thin film transistors (TFTs) connected in parallel, and switch transistors connected in series to the TFTs and metal lines.
 
 
- Patent 8: A memory device that includes multiple layers of gate electrodes and interconnects on a substrate. The device includes a first memory cell with source/drain conductive lines and a channel layer and memory layer on the sides of these lines.
 
 
- Patent 9: A system for generating a pulse width modulation (PWM) signal with a specific duty cycle. The system includes a square wave generator, a logic device, and multiple square wave signals.
 
 
- Patent 10: A device for electrostatic discharge (ESD) protection that includes an ESD detector, P-type and N-type transistors connected in series, a drive circuit, and protection circuits operating in different power domains.
 
 
Notable applications:
 
 
* Memory devices with improved performance and reliability.
 
* Ferroelectric memory devices with enhanced electrode materials.
 
* Integrated chips with ferroelectric gate dielectric layers.
 
* Memory devices with resistance-switchable elements.
 
* Memory devices with stacked layers and oxygen scavenging layers.
 
* Methods for fabricating memory devices with improved process efficiency.
 
* Semiconductor memory devices with parallel thin film transistors.
 
* Memory devices with barrier structures for improved performance.
 
* Systems for generating PWM signals with specific duty cycles.
 
* ESD protection devices with improved circuitry and power domain control.
 
 
 
 
 
 
==Patent applications for Taiwan Semiconductor Manufacturing Company, Ltd. on October 12th, 2023==
 
==Patent applications for Taiwan Semiconductor Manufacturing Company, Ltd. on October 12th, 2023==
  

Revision as of 16:53, 17 October 2023

Contents

Patent applications for Taiwan Semiconductor Manufacturing Company, Ltd. on October 12th, 2023

APPARATUS FOR OPTICAL COUPLING AND SYSTEM FOR COMMUNICATION (18334386)

Inventor Feng-Wei Kuo

PELLICLE FRAME WITH STRESS RELIEF TRENCHES (18335232)

Inventor Kuo-Hao LEE

PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN (18208794)

Inventor Li-Po YANG

METHOD FOR PERFORMING LITHOGRAPHY PROCESS, LIGHT SOURCE, AND EUV LITHOGRAPHY SYSTEM (18326354)

Inventor Chi YANG

EUV LITHOGRAPHY APPARATUS AND OPERATING METHOD FOR MITIGATING CONTAMINATION (17717709)

Inventor I-Hsiung HUANG

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM FOR SAME (18335505)

Inventor Ke-Ying SU

METHOD FOR NEURAL NETWORK WITH WEIGHT QUANTIZATION (17719294)

Inventor Kea Tiong TANG

Low Power Scheme for Power Down in Integrated Dual Rail SRAMs (18328836)

Inventor Sanjeev Kumar Jain

MEMORY DEVICE (18336428)

Inventor He-Zhou WAN

MEMORY DEVICE FOR REDUCING ACTIVE POWER (18336418)

Inventor Tsung-Hsien HUANG

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF (18336386)

Inventor Peng-Chun Liou

MEMORY DEVICE AND OPERATION METHOD THEREOF (17715959)

Inventor Jer-Fu Wang

Sram Performance Optimization Via Transistor Width And Threshold Voltage Tuning (18336304)

Inventor Jhon Jhy Liaw

MEMORY DEVICE AND SYSTEM (17716609)

Inventor Yu-Der CHIH

BIT LINE AND WORD LINE CONNECTION FOR MEMORY ARRAY (18332058)

Inventor Chang-Chih Huang

MEMORY ARRAY, MEMORY STRUCTURE AND OPERATION METHOD OF MEMORY ARRAY (17715964)

Inventor Kerem Akarvardar

SEMICONDUCTOR BURIED LAYER (18203849)

Inventor Hung-Te Lin

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE (18333100)

Inventor Yu-Chen CHANG

WAFER TRANSFER SYSTEM AND A METHOD FOR TRANSPORTING WAFERS (17894862)

Inventor Ren-Hau Wu

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME (17719040)

Inventor Fan-Cheng LIN

SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT (18333124)

Inventor Wen-Sheh HUANG

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (17715967)

Inventor Chia-Cheng Chao

WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES (17815884)

Inventor Shahaji B. More

SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF (18205538)

Inventor Shahaji B. More

METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS (18335065)

Inventor Chun-Hung Chen

DAISY-CHAIN SEAL RING STRUCTURE (18335413)

Inventor Chun-Liang LU

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (18334381)

Inventor Wensen Hung

INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME (18334136)

Inventor Chih-Liang CHEN

INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL (17716485)

Inventor Meng-Pei LU

PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME (18328913)

Inventor Po-Chen LAI

TRANSMISSION LINE STRUCTURE FOR RF SIGNAL (17716050)

Inventor Hsiu-Ying CHO

SEMICONDUCTOR PACKAGE INCLUDING SOIC DIE STACKS (17714147)

Inventor Jen-Yuan Chang

3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS (17848815)

Inventor Yao-Chung Chang

PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME (18334390)

Inventor Po-Yao Lin

ISOLATION STRUCTURE CONFIGURED TO REDUCE CROSS TALK IN IMAGE SENSOR (17861708)

Inventor Cheng-Ying Ho

METAL-INSULATOR-METAL CAPACITOR AND METHODS OF MANUFACTURING (17658732)

Inventor Yuan-Sheng HUANG

CONTACT FIELD PLATE (17715900)

Inventor Tao-Cheng Liu

INNER SPACER FOR SEMICONDUCTOR DEVICE (17716192)

Inventor Fu-Ting YEN

BUFFER EPITAXIAL REGION IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME (18163649)

Inventor Shahaji B. More

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME (17717892)

Inventor Ta-Chun LIN

METHOD OF FORMING SEMICONDUCTOR DEVICE (17714630)

Inventor Chieh-Wei CHEN

INTEGRATED CIRCUIT, TRANSISTOR AND METHOD OF FABRICATING THE SAME (18336044)

Inventor Yu-Wei Jiang

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME (18333982)

Inventor Shu-Jui CHANG

FeFET OF 3D STRUCTURE FOR CAPACITANCE MATCHING (18331241)

Inventor Hung-Li Chiang

ELECTROSTATIC DISCHARGE PROTECTION (17865809)

Inventor Chia-Hui Chen

Pulse Width Control Apparatus and Method (17836046)

Inventor Yi-An Lai

PROTECTIVE LINER LAYERS IN 3D MEMORY STRUCTURE (18336252)

Inventor Tsu Ching Yang

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME (17716517)

Inventor Meng-Han LIN

HIGH SELECTIVITY ISOLATION STRUCTURE FOR IMPROVING EFFECTIVENESS OF 3D MEMORY FABRICATION (18334590)

Inventor Tsu Ching Yang

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME (18336105)

Inventor Chun-Chieh Lu

MEMORY DEVICE AND FORMING METHOD THEREOF (17718071)

Inventor Meng-Han LIN

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY (18335167)

Inventor Rainer Yen-Chieh Huang

MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE (17705653)

Inventor Harry-Hak-Lay Chuang

MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE (18333498)

Inventor Carlos H. Diaz