Taiwan Semiconductor Manufacturing Co., Ltd. patent applications published on October 5th, 2023

From WikiPatents
Jump to navigation Jump to search

Summary of the patent applications from Taiwan Semiconductor Manufacturing Co., Ltd. on October 5th, 2023

Taiwan Semiconductor Manufacturing Co., Ltd. has recently filed patents for various semiconductor devices and methods. These patents cover a range of technologies and applications, including device structures, circuit designs, and fabrication methods. Here is a summary of the recent patents filed by the organization:

- Patent 1: This patent describes a device with multiple layers, including a substrate, dielectric layers, electrodes, and buffer layers. The device's purpose and specific details are not provided in the abstract.

- Patent 2: This patent describes a circuit used for selecting between two voltage supplies. The circuit includes switches and control switches that receive control signals and voltage supplies, allowing for selective output of the voltage supplies based on the control signal.

- Patent 3: This patent describes a device with vertically stacked nanostructures on a semiconductor substrate. The device also includes source/drain regions and a gate structure surrounding the nanostructures. The gate structure consists of a gate dielectric layer, a metal carbide layer, and a gate fill material.

- Patent 4: This patent describes a semiconductor device with a fin structure, source/drain regions, and a gate structure. The gate structure includes a gate stack and a gate capping structure made up of conductive and insulating gate caps. The device also includes a first contact structure located over the gate stack.

- Patent 5: This patent describes a semiconductor device with multiple layers of semiconductor material stacked on top of each other. The device includes gate structures, high-k dielectric layers, gate spacers, and source/drain epitaxial regions. Notably, the top position of the high-k dielectric layer is lower than the top positions of the gate spacers.

- Patent 6: This patent describes a semiconductor device with two layers of gate dielectric material, each doped with a dipole dopant. The first layer has a higher concentration and deeper concentration peak compared to the second layer. The device also includes two gate electrodes with the same width.

- Patent 7: This patent describes a device with a nanostructure on a substrate and a source/drain region consisting of two epitaxial layers. The first layer covers one side of the nanostructure and has a specific dopant concentration, while the second layer covers the rounded convex shape of the first layer with a different dopant concentration.

- Patent 8: This patent describes an optical device with isolation structures placed within a substrate. The device includes metal structures surrounded by dielectric layers, located on the surfaces of the isolation structures.

- Patent 9: This patent describes a semiconductor device with two semiconductor structures, one made of silicon and the other embedded within it. The second structure has convex and concave portions, with the concave portion having various shapes. The second structure is made of germanium, elements from group III or group V of the periodic table, or a combination of these materials.

- Patent 10: This patent describes a method for organizing and connecting transistors in a cell. The cell has active areas separated in one direction and two gates crossing the active areas in another direction. Conductive lines connect the terminals of the transistors, and the method involves turning off a specific transistor to disconnect its source/drain terminal from another transistor's source/drain terminal.

Notable applications:

  • Semiconductor device with vertically stacked nanostructures
  • Circuit for selecting between voltage supplies
  • Semiconductor device with gate capping structure
  • Method for organizing and connecting transistors in a cell
  • Optical device with isolation structures



Contents

Patent applications for Taiwan Semiconductor Manufacturing Co., Ltd. on October 5th, 2023

INTEGRATED CIRCUIT PACKAGE AND METHOD OF FORMING SAME (17812530)

Inventor Chen-Hua Yu

EXTREME ULTRAVIOLET MASK AND METHOD FOR FORMING THE SAME (17744567)

Inventor Yun-Yue LIN

High-Density Memory Cells and Layouts Thereof (17664465)

Inventor Jen-Chieh Liu

WORK FUNCTION TUNING IN SEMICONDUCTOR DEVICES (17807513)

Inventor Hsin-Yi LEE

Varying Temperature Anneal for Film and Structures Formed Thereby (18332056)

Inventor Shu Ling Liao

Gate Structure Passivating Species Drive-In Method and Structure Formed Thereby (18330885)

Inventor Hsiao-Kuan Wei

Semiconductor Device and Methods of Forming the Same (17711885)

Inventor Bor Chiuan Hsieh

Integrated Circuit Package and Method of Forming Thereof (18329302)

Inventor Hsien-Wei Chen

SYSTEMS AND METHODS FOR AUTOMATED PROCESSING PORTS (18206544)

Inventor Tsung-Sheng KUO

Metal Loss Prevention Using Implantation (18330466)

Inventor Li-Chieh Wu

Semiconductor Device and Method of Manufacture (18331387)

Inventor Chun-Yen Peng

Gate Structure of a Semiconductor Device and Method of Forming Same (18314200)

Inventor Shahaji B. More

ETCHING APPARATUS AND METHOD (18328656)

Inventor Bo-Ting LIAO

High Efficiency Heat Dissipation Using Thermal Interface Material Film (18328387)

Inventor Chih-Hao Chen

DEVICE WITH BACKSIDE POWER RAIL AND METHOD (17882339)

Inventor Yun Ju FAN

NON-DMSO STRIPPER FOR ADVANCE PACKAGE METAL PLATING PROCESS (17827415)

Inventor Tzu-Yang LIN

Semiconductor Devices and Methods of Manufacture (17740618)

Inventor Chen-Yu Tsai

PREVENTION OF METAL PAD CORROSION DUE TO EXPOSURE TO HALOGEN (18329128)

Inventor Chih-Fan Huang

Multi-Bump Connection to Interconnect Structure and Manufacturing Method Thereof (18327252)

Inventor Tsung-Yen Lee

INTEGRATED CIRCUIT PACKAGES HAVING ADHESION LAYERS FOR THROUGH VIAS (18330616)

Inventor Hung-Chun Cho

SEMICONDUCTOR DEVICE AND METHOD HAVING HIGH-KAPPA BONDING LAYER (18151160)

Inventor Che Chi SHIH

SEMICONDUCTOR DEVICE AND METHOD (17656935)

Inventor Kai-Qiang Wen

INTEGRATED CIRCUIT (18331011)

Inventor Guo-Huei WU

SEMICONDUCTOR DEVICE (18329218)

Inventor Zong-Jie WU

ISOLATION STRUCTURES IN IMAGE SENSORS (17879556)

Inventor Cheng-Ying Ho

Source/Drain Regions of Semiconductor Device and Methods of Forming the Same (17712965)

Inventor Yung-Chun Yang

Semiconductor Device having Doped Gate Dielectric Layer and Method for Forming the Same (18152601)

Inventor Yao-Teng Chuang

SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DEPOSITION (18324636)

Inventor Tung-Ying LEE

Gate Capping Structures In Semiconductor Devices (18206831)

Inventor Chung-Liang CHENG

TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THEREOF (17833348)

Inventor Hsin-Yi Lee

VOLTAGE SUPPLY SELECTION CIRCUIT (18330492)

Inventor Chia-Chen KUO

Phase-Change Memory and Method of Forming Same (18321843)

Inventor Jau-Yi Wu

Retrieved from "http://wikipatents.org/index.php?title=Taiwan_Semiconductor_Manufacturing_Co.,_Ltd._patent_applications_published_on_October_5th,_2023&oldid=1013"