Difference between revisions of "TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. patent applications published on November 30th, 2023"

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'''Summary of the patent applications from TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023'''
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Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has recently filed several patents related to various aspects of semiconductor device manufacturing and circuit operation. These patents cover methods for forming interconnect structures, operating circuits, manufacturing integrated circuit devices, fabricating semiconductor devices, and creating high-voltage devices. Notable applications include improved optical coupling capabilities, enhanced performance and functionality of high-voltage devices, improved dielectric properties for multilayer structures, and manufacturing methods for CMOS image sensors.
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Summary:
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- TSMC has filed patents for methods of forming interconnect structures over substrates, including memory devices with transistors.
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- They have also filed patents for methods of operating circuits, such as operational amplifiers, sampling switches, holding switches, and combined switches.
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- TSMC's patents also cover methods for manufacturing integrated circuit devices using photonic structures and improved optical coupling capabilities.
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- They have developed a semiconductor device with a metal gate layer, channel, and ferroelectric layer made of a hafnium oxide-based material with different phases.
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- TSMC's patents also include methods for fabricating semiconductor devices, such as forming semiconductor fins, isolation regions, and recesses in substrates.
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- They have developed a high-voltage device with specific structural features and doping configurations to enhance performance and functionality.
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- TSMC's patents also cover multilayer structures with improved dielectric properties for use in electronic devices.
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- They have developed semiconductor structures with capacitor structures and contact structures for improved electrical connections.
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- TSMC's patents also include methods for manufacturing semiconductor structures for CMOS image sensors with improved performance and reliability.
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- They have developed semiconductor structures with fins protruding from substrates and gate electrodes with conductive portions.
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Notable Applications:
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* Improved optical coupling capabilities in integrated circuit devices.
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* Enhanced performance and functionality of high-voltage devices.
 +
* Improved dielectric properties for multilayer structures in electronic devices.
 +
* Manufacturing methods for CMOS image sensors with improved performance and reliability.
 +
 +
 +
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==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023==
 
==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023==
  

Revision as of 01:43, 6 December 2023

Summary of the patent applications from TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023

Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has recently filed several patents related to various aspects of semiconductor device manufacturing and circuit operation. These patents cover methods for forming interconnect structures, operating circuits, manufacturing integrated circuit devices, fabricating semiconductor devices, and creating high-voltage devices. Notable applications include improved optical coupling capabilities, enhanced performance and functionality of high-voltage devices, improved dielectric properties for multilayer structures, and manufacturing methods for CMOS image sensors.

Summary:

- TSMC has filed patents for methods of forming interconnect structures over substrates, including memory devices with transistors. - They have also filed patents for methods of operating circuits, such as operational amplifiers, sampling switches, holding switches, and combined switches. - TSMC's patents also cover methods for manufacturing integrated circuit devices using photonic structures and improved optical coupling capabilities. - They have developed a semiconductor device with a metal gate layer, channel, and ferroelectric layer made of a hafnium oxide-based material with different phases. - TSMC's patents also include methods for fabricating semiconductor devices, such as forming semiconductor fins, isolation regions, and recesses in substrates. - They have developed a high-voltage device with specific structural features and doping configurations to enhance performance and functionality. - TSMC's patents also cover multilayer structures with improved dielectric properties for use in electronic devices. - They have developed semiconductor structures with capacitor structures and contact structures for improved electrical connections. - TSMC's patents also include methods for manufacturing semiconductor structures for CMOS image sensors with improved performance and reliability. - They have developed semiconductor structures with fins protruding from substrates and gate electrodes with conductive portions.

Notable Applications:

  • Improved optical coupling capabilities in integrated circuit devices.
  • Enhanced performance and functionality of high-voltage devices.
  • Improved dielectric properties for multilayer structures in electronic devices.
  • Manufacturing methods for CMOS image sensors with improved performance and reliability.



Contents

Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023

APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824930)

Main Inventor

CHUN-HSI HUANG


METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18359900)

Main Inventor

YI-CHUAN TENG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME (18359892)

Main Inventor

CHING-KAI SHEN


ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION (17827834)

Main Inventor

CHIA-CHUN LIAO


EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME (18361891)

Main Inventor

FENG YUAN HSU


METHOD AND SYSTEM FOR SCANNING WAFER (18359871)

Main Inventor

PEI-HSUAN LEE


WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824926)

Main Inventor

YING-CHIEH MENG


METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM (17824942)

Main Inventor

YUAN-CHENG YANG


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824936)

Main Inventor

JHU-MIN SONG


SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME (18360855)

Main Inventor

WEI-LUN CHEN


SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME (17824922)

Main Inventor

CHING-HUNG KAO


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824924)

Main Inventor

JUI-LIN CHU


MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE (17827837)

Main Inventor

HAI-DANG TRINH


HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME (17827824)

Main Inventor

YU-YING LAI


SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (18232533)

Main Inventor

Ya-Yi Tsai


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE (18360804)

Main Inventor

CHUN-YEN PENG


METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF (17824923)

Main Inventor

WEI-KANG LIU


CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE (18360849)

Main Inventor

BEI-SHING LIEN


MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME (17829324)

Main Inventor

MENG-HAN LIN