Difference between revisions of "TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. patent applications published on November 30th, 2023"

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'''Summary of the patent applications from TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023'''
 
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Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has recently filed several patents related to various aspects of semiconductor device manufacturing and circuit operation. These patents cover methods for forming interconnect structures, operating circuits, manufacturing integrated circuit devices, fabricating semiconductor devices, and creating high-voltage devices. Notable applications include improved optical coupling capabilities, enhanced performance and functionality of high-voltage devices, improved dielectric properties for multilayer structures, and manufacturing methods for CMOS image sensors.
 
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Summary:
 
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- TSMC has filed patents for methods of forming interconnect structures over substrates, including memory devices with transistors.
 
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- They have also filed patents for methods of operating circuits, such as operational amplifiers, sampling switches, holding switches, and combined switches.
 
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- TSMC's patents also cover methods for manufacturing integrated circuit devices using photonic structures and improved optical coupling capabilities.
 
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- They have developed a semiconductor device with a metal gate layer, channel, and ferroelectric layer made of a hafnium oxide-based material with different phases.
 
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- TSMC's patents also include methods for fabricating semiconductor devices, such as forming semiconductor fins, isolation regions, and recesses in substrates.
 
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- They have developed a high-voltage device with specific structural features and doping configurations to enhance performance and functionality.
 
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- TSMC's patents also cover multilayer structures with improved dielectric properties for use in electronic devices.
 
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- They have developed semiconductor structures with capacitor structures and contact structures for improved electrical connections.
 
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- TSMC's patents also include methods for manufacturing semiconductor structures for CMOS image sensors with improved performance and reliability.
 
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- They have developed semiconductor structures with fins protruding from substrates and gate electrodes with conductive portions.
 
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Notable Applications:
 
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* Improved optical coupling capabilities in integrated circuit devices.
 
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* Enhanced performance and functionality of high-voltage devices.
 
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* Improved dielectric properties for multilayer structures in electronic devices.
 
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* Manufacturing methods for CMOS image sensors with improved performance and reliability.
 
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==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023==
 
==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023==
  
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===APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824930. APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract|17824930]])===
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===APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824930. APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824930]])===
  
  
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===METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18359900. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract|18359900]])===
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===METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18359900. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18359900]])===
  
  
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME ([[US Patent Application 18359892. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME simplified abstract|18359892]])===
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME ([[US Patent Application 18359892. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18359892]])===
  
  
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===ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION ([[US Patent Application 17827834. ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION simplified abstract|17827834]])===
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===ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION ([[US Patent Application 17827834. ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17827834]])===
  
  
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===EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME ([[US Patent Application 18361891. EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME simplified abstract|18361891]])===
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===EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME ([[US Patent Application 18361891. EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18361891]])===
  
  
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===METHOD AND SYSTEM FOR SCANNING WAFER ([[US Patent Application 18359871. METHOD AND SYSTEM FOR SCANNING WAFER simplified abstract|18359871]])===
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===METHOD AND SYSTEM FOR SCANNING WAFER ([[US Patent Application 18359871. METHOD AND SYSTEM FOR SCANNING WAFER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18359871]])===
  
  
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===WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824926. WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract|17824926]])===
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===WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 17824926. WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824926]])===
  
  
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===METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM ([[US Patent Application 17824942. METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM simplified abstract|17824942]])===
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===METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM ([[US Patent Application 17824942. METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824942]])===
  
  
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824936. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract|17824936]])===
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824936. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824936]])===
  
  
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===SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME ([[US Patent Application 18360855. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract|18360855]])===
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===SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME ([[US Patent Application 18360855. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18360855]])===
  
  
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===SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824922. SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME simplified abstract|17824922]])===
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===SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824922. SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824922]])===
  
  
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824924. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract|17824924]])===
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17824924. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824924]])===
  
  
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===MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE ([[US Patent Application 17827837. MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE simplified abstract|17827837]])===
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===MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE ([[US Patent Application 17827837. MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17827837]])===
  
  
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===HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract|17827824]])===
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===HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME ([[US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17827824]])===
  
  
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===SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF ([[US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract|18232533]])===
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===SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF ([[US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18232533]])===
  
  
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE ([[US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract|18360804]])===
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE ([[US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18360804]])===
  
  
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===METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF ([[US Patent Application 17824923. METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF simplified abstract|17824923]])===
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===METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF ([[US Patent Application 17824923. METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17824923]])===
  
  
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===CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE ([[US Patent Application 18360849. CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE simplified abstract|18360849]])===
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===CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE ([[US Patent Application 18360849. CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|18360849]])===
  
  
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===MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME ([[US Patent Application 17829324. MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract|17829324]])===
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===MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME ([[US Patent Application 17829324. MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)|17829324]])===
  
  

Revision as of 07:03, 5 December 2023

Contents

Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023

APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824930)

Main Inventor

CHUN-HSI HUANG


METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18359900)

Main Inventor

YI-CHUAN TENG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME (18359892)

Main Inventor

CHING-KAI SHEN


ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION (17827834)

Main Inventor

CHIA-CHUN LIAO


EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME (18361891)

Main Inventor

FENG YUAN HSU


METHOD AND SYSTEM FOR SCANNING WAFER (18359871)

Main Inventor

PEI-HSUAN LEE


WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824926)

Main Inventor

YING-CHIEH MENG


METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM (17824942)

Main Inventor

YUAN-CHENG YANG


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824936)

Main Inventor

JHU-MIN SONG


SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME (18360855)

Main Inventor

WEI-LUN CHEN


SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME (17824922)

Main Inventor

CHING-HUNG KAO


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824924)

Main Inventor

JUI-LIN CHU


MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE (17827837)

Main Inventor

HAI-DANG TRINH


HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME (17827824)

Main Inventor

YU-YING LAI


SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (18232533)

Main Inventor

Ya-Yi Tsai


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE (18360804)

Main Inventor

CHUN-YEN PENG


METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF (17824923)

Main Inventor

WEI-KANG LIU


CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE (18360849)

Main Inventor

BEI-SHING LIEN


MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME (17829324)

Main Inventor

MENG-HAN LIN

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