Sk hynix inc. (20240121956). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Rho Gyu Kwak of Gyeonggi-do (KR)
In Su Park of Gyeonggi-do (KR)
Jung Shik Jang of Gyeonggi-do (KR)
Seok Min Choi of Gyeonggi-do (KR)
Won Geun Choi of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121956 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes first and second insulating pillars, first and second memory cells, and specific arrangements to optimize the device's performance.
- The semiconductor device consists of first insulating pillars arranged in a specific direction and second insulating pillars arranged alternately with the first insulating pillars, with different widths in different directions.
- First memory cells are located between the second insulating pillars and stacked along a first sidewall of each of the first insulating pillars.
- Second memory cells are located between the second insulating pillars and stacked along a second sidewall of each of the first insulating pillars.
Potential Applications
The technology described in this patent application could be applied in:
- Memory devices
- Semiconductor manufacturing
Problems Solved
This technology addresses issues such as:
- Increasing memory cell density
- Improving semiconductor device performance
Benefits
The benefits of this technology include:
- Enhanced memory cell stacking
- Improved overall semiconductor device efficiency
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage devices
Possible Prior Art
One possible prior art for this technology could be:
- Stacked memory cells in semiconductor devices
Unanswered Questions
How does this technology compare to existing memory cell stacking techniques?
This article does not provide a direct comparison to existing memory cell stacking techniques, leaving room for further analysis and research.
What are the specific dimensions of the insulating pillars and memory cells in this semiconductor device?
The abstract does not specify the exact dimensions of the insulating pillars and memory cells, which could be crucial for understanding the device's performance and potential applications.
Original Abstract Submitted
a semiconductor device may include: first insulating pillars arranged in a first direction; second insulating pillars arranged alternately with the first insulating pillars and having a first width in the first direction and a second width in a second direction intersecting the first direction, the first width being greater than the second width; first memory cells located between the second insulating pillars and stacked along a first sidewall of each of the first insulating pillars; and second memory cells located between the second insulating pillars and stacked along a second sidewall of each of the first insulating pillars.
