Sk hynix inc. (20240121955). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Jong Gi Kim of Icheon-si Gyeonggi-do (KR)
Young Jin Noh of Icheon-si Gyeonggi-do (KR)
Jae O Park of Icheon-si Gyeonggi-do (KR)
Jin Ho Bin of Icheon-si Gyeonggi-do (KR)
Dong Chul Yoo of Icheon-si Gyeonggi-do (KR)
Yoo Il Jeon of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121955 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The manufacturing method of a semiconductor device described in the abstract involves forming a stack with alternating first and second material layers, creating an opening in the stack, depositing a seed layer in the opening, treating the seed layer to form a buffer layer, and then oxidizing the seed layer to create a blocking layer.
- Forming a stack with alternating first and second material layers
- Creating an opening in the stack
- Depositing a seed layer in the opening
- Treating the seed layer to form a buffer layer
- Oxidizing the seed layer to create a blocking layer
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and sensors.
Problems Solved
This method helps improve the performance and reliability of semiconductor devices by enhancing the quality of the seed layer and providing a blocking layer to prevent unwanted interactions.
Benefits
- Enhanced performance of semiconductor devices - Improved reliability and longevity - Better control over the manufacturing process
Potential Commercial Applications
"Advanced Semiconductor Device Manufacturing Method for Improved Performance and Reliability"
Possible Prior Art
There may be prior art related to surface treatment and oxidation processes in semiconductor manufacturing, but specific examples are not provided in the abstract.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness?
The abstract does not mention any cost considerations or comparisons with other manufacturing methods.
Are there any limitations or challenges associated with implementing this method on an industrial scale?
The abstract does not address any potential limitations or challenges that may arise when scaling up this manufacturing method for mass production.
Original Abstract Submitted
a manufacturing method of a semiconductor device may include: forming a stack comprising first material layers and second material layers that are alternately stacked; forming an opening in the stack; forming a first seed layer in the opening; forming a first buffer layer by surface-treating the first seed layer; and forming a blocking layer by oxidizing the first seed layer through the first buffer layer.
