Sk hynix inc. (20240121953). SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Cheongju-si Chungcheongbuk-do (KR)
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121953 titled 'SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the abstract involves manufacturing a semiconductor device by forming sacrificial layers, a stack, a channel structure, a slit, and source layers. Here are some bullet points to explain the patent/innovation:
- Form a sacrificial layer with two portions of different thicknesses.
- Create a stack with alternating material layers on the sacrificial layer.
- Make a channel structure passing through the stack.
- Form a slit passing through the stack to the thicker portion of the sacrificial layer.
- Remove the sacrificial layer through the slit to create an opening.
- Form a source layer connected to the channel structure in the opening.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This method allows for the precise formation of intricate structures within semiconductor devices, improving their performance and efficiency.
Benefits
The method enables the creation of complex semiconductor devices with high precision and reliability, leading to enhanced functionality and durability.
Potential Commercial Applications
The technology could be utilized in the production of cutting-edge electronic devices for various industries, including telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of sacrificial layers in semiconductor manufacturing processes to create intricate structures within devices. However, the specific method described in this patent application may offer unique advantages and improvements over existing techniques.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This article does not provide a direct comparison between this innovative method and traditional semiconductor manufacturing techniques. It would be helpful to understand the specific advantages and limitations of this new approach in relation to established practices.
What are the potential challenges or limitations of implementing this method on an industrial scale?
The article does not address the scalability or practicality of applying this method in large-scale semiconductor manufacturing facilities. It would be important to explore any potential obstacles or constraints that could arise when implementing this technology in a commercial production environment.
Original Abstract Submitted
a method of manufacturing a semiconductor device according to an embodiment of the present disclosure may include forming a first sacrificial layer including a first portion and a second portion having a thickness thicker than a thickness of the first portion, forming a stack including first material layers and second material layers alternating with each other on the first sacrificial layer, forming a channel structure passing through the stack and extending to the first portion, forming a slit passing through the stack and extending to the second portion, removing the first sacrificial layer through the slit to form a first opening, and forming a second source layer connected to the channel structure in the first opening.
