Sk hynix inc. (20240121948). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

sk hynix inc.

Inventor(s)

Jae Man Yoon of Gyeonggi-do (KR)

Jin Hwan Jeon of Gyeonggi-do (KR)

Tae Kyun Kim of Gyeonggi-do (KR)

Jung Woo Park of Gyeonggi-do (KR)

Su Ock Chung of Gyeonggi-do (KR)

Jae Won Ha of Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240121948 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The present invention relates to a semiconductor device with an active region formed in a substrate, upper-level plugs, a spacer, lower-level plug, and a buried conductive line.

  • Active region with flat surfaces and hole-shaped recess portions
  • Upper-level plugs over the flat surfaces
  • Spacer providing a trench exposing the hole-shaped recess portions
  • Lower-level plug filling the hole-shaped recess portions
  • Buried conductive line disposed over the lower-level plug and partially filling the trench

Potential Applications

The semiconductor device described in this patent application could be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.

Problems Solved

This technology solves the problem of efficiently connecting different components in a semiconductor device while maintaining proper insulation and conductivity.

Benefits

The benefits of this technology include improved performance, reliability, and efficiency of semiconductor devices. It also allows for more compact designs and better heat dissipation.

Potential Commercial Applications

  • "Innovative Semiconductor Device Technology for Enhanced Performance"

Possible Prior Art

One possible prior art for this technology could be the use of similar structures in previous semiconductor devices, but with different configurations or materials.

Unanswered Questions

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures to evaluate its performance and efficiency.

Are there any limitations or drawbacks to implementing this technology in practical applications?

The article does not mention any limitations or drawbacks that may arise from implementing this technology in practical applications.


Original Abstract Submitted

a semiconductor device and a method of fabricating the same are provided. according to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.