Samsung electronics co., ltd. (20240138157). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138157 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
A three-dimensional semiconductor memory device includes a peripheral structure and a cell structure. The cell structure consists of a substrate with gate electrodes stacked on one surface, an insulating layer on the opposite surface, a penetration contact plug, two gapfill conductive patterns, and two gapfill spacers.
- Substrate with gate electrodes stacked on one surface
- Insulating layer on the opposite surface
- Penetration contact plug penetrating the substrate
- Two gapfill conductive patterns provided to penetrate the substrate and insulating layer
- Two gapfill spacers between the conductive patterns and the substrate
Potential Applications
The technology can be applied in the development of high-density and high-performance semiconductor memory devices for various electronic devices.
Problems Solved
This technology solves the challenge of increasing memory density and performance in semiconductor devices by utilizing a three-dimensional cell structure.
Benefits
The benefits of this technology include improved memory storage capacity, faster data access speeds, and enhanced overall performance of semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of advanced solid-state drives (SSDs), mobile devices, and other electronic products requiring high-speed and high-capacity memory storage.
Possible Prior Art
One possible prior art for this technology could be the development of three-dimensional NAND flash memory technology, which also aims to increase memory density and performance in semiconductor devices.
Unanswered Questions
How does this technology compare to existing three-dimensional memory structures in terms of performance and scalability?
The article does not provide a direct comparison with existing three-dimensional memory structures, leaving a gap in understanding the competitive advantages of this technology.
What are the potential limitations or challenges in implementing this three-dimensional semiconductor memory device in mass production?
The article does not address any potential limitations or challenges in mass production, leaving uncertainties about the practicality and feasibility of scaling up this technology for commercial use.
Original Abstract Submitted
a three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. the cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.
