Samsung electronics co., ltd. (20240138143). SEMICONDUCTOR MEMORY DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Chulkwon Park of Hwaseong-si (KR)
Sunghee Han of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138143 titled 'SEMICONDUCTOR MEMORY DEVICES
Simplified Explanation
The semiconductor memory device described in the abstract includes a substrate with a memory cell region and a dummy cell region surrounding it. The memory cell region contains multiple memory cells and active regions that extend in a diagonal direction. The dummy cell region also contains dummy active regions that extend in the same diagonal direction.
- Memory cell region with multiple memory cells and active regions
- Active regions extend in a diagonal direction
- Dummy cell region with dummy active regions
- Dummy active regions also extend in the diagonal direction
Potential Applications
This technology could be applied in:
- High-density memory devices
- Improved memory cell performance
Problems Solved
This technology helps address:
- Efficient use of space in memory devices
- Enhanced memory cell functionality
Benefits
The benefits of this technology include:
- Increased memory capacity
- Enhanced memory cell efficiency
Potential Commercial Applications
This technology could be beneficial in:
- Consumer electronics
- Data storage devices
Possible Prior Art
One possible prior art for this technology could be:
- Memory devices with traditional memory cell layouts
Unanswered Questions
How does this technology impact power consumption in semiconductor memory devices?
This article does not address the specific impact of this technology on power consumption in semiconductor memory devices. Further research or testing may be needed to determine the effect on power usage.
What are the potential challenges in implementing this technology on a large scale?
The article does not discuss the potential challenges that may arise when implementing this technology on a large scale. Factors such as manufacturing costs, production efficiency, and compatibility with existing systems could be important considerations in scaling up this innovation.
Original Abstract Submitted
a semiconductor memory device includes a substrate comprising a memory cell region and a dummy cell region surrounding the memory cell region, the memory cell region including a plurality of memory cells, a plurality of active regions in the memory cell region, each of the plurality of active regions extending in a long axis direction, the long axis direction being a diagonal direction with respect to a first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, each of the plurality of active regions having a first width in a short axis direction orthogonal to the long axis direction, and a plurality of dummy active regions in the dummy cell region, each extending in the long axis direction, each of the plurality of dummy active regions having a second width greater than the first width in the short axis direction.
