Samsung electronics co., ltd. (20240138142). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Joon Song of Suwon-si (KR)
Dong-Sik Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138142 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the patent application includes a complex structure with various components such as peripheral gate structures, bitlines, insulating patterns, channel structures, wordlines, landing pads, passage patterns, and data storage patterns.
- Peripheral gate structure on a substrate
- Bitlines on the peripheral gate structure extending in a first direction
- Protruding insulating pattern with channel trenches in a second direction intersecting the first direction
- Channel structures on the bitlines with a metal oxide
- First wordlines and second wordlines on the channel structures in the second direction, spaced apart in the first direction
- Landing pads on the channel structures connected to the channel structures
- Pad separation patterns on the insulating pattern separating the landing pads
- First passage patterns made of an oxide-based insulating material connected to the insulating pattern through pad separation patterns
- Data storage patterns on the landing pads
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor memory devices for various electronic devices such as smartphones, tablets, laptops, and servers.
Problems Solved
This technology solves the problem of increasing the storage capacity and improving the performance of semiconductor memory devices by optimizing the layout and design of the memory cell structures.
Benefits
The benefits of this technology include higher storage density, faster data access speeds, improved reliability, and reduced power consumption in semiconductor memory devices.
Potential Commercial Applications
- Optimizing Memory Cell Structures for Improved Performance in Semiconductor Memory Devices
Possible Prior Art
One possible prior art in this field could be the development of similar semiconductor memory devices with intricate memory cell structures to enhance storage capacity and performance.
Unanswered Questions
How does this technology compare to existing memory cell structures in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing memory cell structures in terms of performance and efficiency.
What are the potential challenges or limitations in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges or limitations in implementing this technology on a large scale for commercial production.
Original Abstract Submitted
disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns disposed on the landing pads.
