Samsung electronics co., ltd. (20240138136). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138136 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes various patterns and layers on a substrate, allowing for efficient memory storage and retrieval. Here are some key points to note:
- The device has a substrate with active patterns, channel patterns, and source/drain patterns for data storage and transfer.
- A gate electrode is provided on the channel pattern to control the flow of data.
- A shared contact electrically connects the source/drain pattern and gate electrode.
- A backside metal layer on the second surface provides additional support and functionality.
Potential Applications
The technology described in this semiconductor memory device could be applied in various electronic devices such as smartphones, computers, and tablets for data storage and processing.
Problems Solved
This technology solves the problem of efficient data storage and retrieval in semiconductor memory devices, improving overall performance and reliability.
Benefits
The benefits of this technology include faster data access, increased storage capacity, and enhanced device functionality.
Potential Commercial Applications
The semiconductor memory device could be utilized in the consumer electronics industry for manufacturing high-performance devices with advanced memory capabilities.
Possible Prior Art
One possible prior art in semiconductor memory devices is the use of shared contacts to connect different patterns and layers for improved data processing efficiency.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and capacity?
This article does not provide a direct comparison with existing memory devices in terms of speed and capacity. Further research or testing may be needed to determine the exact performance differences.
What are the potential limitations or drawbacks of implementing this technology in practical devices?
The article does not address any potential limitations or drawbacks of implementing this technology in practical devices. Additional studies or analyses may be required to identify any challenges that could arise during implementation.
Original Abstract Submitted
a semiconductor memory device includes a substrate including first and second surfaces opposite to each other, a first active pattern on the first surface, a first channel pattern on the first active pattern and a first source/drain pattern connected to the first channel pattern, a gate electrode provided on the first channel pattern and extending in a first direction, the gate electrode adjacent to the first source/drain pattern in a second direction intersecting the first direction, a shared contact provided under the first source/drain pattern and the gate electrode and electrically connecting the first source/drain pattern and the gate electrode to each other, and a backside metal layer on the second surface.
