Samsung electronics co., ltd. (20240136396). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
- 1.9.3 What are the specific materials used in the isolation pattern, liner, and gate structure, and how do they contribute to the overall functionality of the semiconductor device?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136396 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes various components such as an active pattern, isolation pattern, liner, gate structure, and channels. Here is a simplified explanation of the patent application:
- The semiconductor device has an active pattern on a substrate.
- An isolation pattern on the substrate covers the opposite sidewalls of the active pattern.
- A liner, made of a different material from the isolation pattern, is on the isolation pattern.
- A gate structure contacts the upper surface of the active pattern and the upper surface of the liner.
- A plurality of channels are spaced apart in a vertical direction, each extending through the gate structure.
Potential Applications
This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications such as smartphones, computers, and other consumer electronics.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing better isolation and control over the flow of electrical current.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and reduced power consumption in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance integrated circuits and microprocessors.
Possible Prior Art
One possible prior art for this technology could be the use of similar isolation patterns and gate structures in previous semiconductor devices to improve device performance and efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this technology.
What are the specific materials used in the isolation pattern, liner, and gate structure, and how do they contribute to the overall functionality of the semiconductor device?
The article does not delve into the specific materials used in each component of the semiconductor device and their individual roles in enhancing the device's functionality.
Original Abstract Submitted
a semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.
