Samsung electronics co., ltd. (20240136374). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Jung Wook Lim of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136374 titled 'IMAGE SENSOR
Simplified Explanation
The image sensor described in the patent application consists of sub-pixels with photoelectric conversion regions, floating diffusion regions, and transfer transistors to transfer charges accumulated in the photoelectric conversion regions to the floating diffusion regions.
- The first sub-pixel includes a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor.
- The second sub-pixel, adjacent to the first, includes a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor.
- The first photoelectric conversion region may have sub-regions partitioned by a potential level isolation region.
- The first transfer transistor includes sub-transfer transistors to transfer charges from the sub-regions to the floating diffusion region.
Potential Applications
This technology can be used in digital cameras, smartphones, and other devices with image capturing capabilities.
Problems Solved
This innovation helps improve the efficiency and performance of image sensors by enhancing charge transfer between different regions of the sensor.
Benefits
The benefits of this technology include higher image quality, improved low-light performance, and reduced noise in captured images.
Potential Commercial Applications
Commercial applications of this technology include digital cameras, security cameras, medical imaging devices, and automotive cameras.
Possible Prior Art
Prior art in image sensor technology includes similar innovations in charge transfer mechanisms and pixel design to improve image quality and sensor performance.
Unanswered Questions
How does this technology compare to existing image sensor designs in terms of power consumption and image quality?
This article does not provide a direct comparison between this technology and existing image sensor designs in terms of power consumption and image quality. Further research or testing would be needed to evaluate these aspects.
What are the potential limitations or challenges in implementing this technology in mass-produced consumer devices?
The article does not address potential limitations or challenges in implementing this technology in mass-produced consumer devices. Factors such as cost, manufacturing complexity, and compatibility with existing hardware could pose challenges that need to be explored further.
Original Abstract Submitted
an image sensor comprises a first sub-pixel comprising a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges accumulated in the first photoelectric conversion region to the first floating diffusion region; and a second sub-pixel adjacent to the first sub-pixel, and comprising a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges accumulated in the second photoelectric conversion region to the second floating diffusion region. the first photoelectric conversion region may comprise a first and a second sub-region partitioned by a potential level isolation region that blocks movement of charges, and the first transfer transistor may comprise a first sub-transfer transistor to transfer charges accumulated in the first sub-region to the first floating diffusion region, and a second sub-transfer transistor to transfer charges accumulated in the second sub-region to the first floating diffusion region.
