Samsung electronics co., ltd. (20240136286). SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER simplified abstract
SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER
Organization Name
Inventor(s)
Cheoljin Cho of Hwaseong-si (KR)
Jaehyoung Choi of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136286 titled 'SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER
Simplified Explanation
The semiconductor device described in the patent application includes a landing pad on a substrate, a lower electrode with protective layers, a conductive layer, a supporter pattern, a dielectric layer, and an upper electrode.
- The outer protective layer of the lower electrode is made of titanium oxide.
- The conductive layer between the protective layers is composed of titanium nitride.
- The inner protective layer is made of titanium silicon nitride.
- The supporter pattern on the side surface of the lower electrode includes a supporter hole.
- The dielectric layer is present on the surface of both the lower electrode and the supporter pattern.
- The upper electrode is located on the dielectric layer.
- Potential Applications:**
This technology could be used in the manufacturing of advanced semiconductor devices, such as memory chips, processors, and sensors.
- Problems Solved:**
This innovation helps improve the performance and reliability of semiconductor devices by providing enhanced protection and structural support to the electrodes.
- Benefits:**
The use of protective layers and supporter patterns increases the durability and longevity of the semiconductor device, leading to better overall performance and efficiency.
- Potential Commercial Applications:**
The technology could be applied in various industries, including electronics, telecommunications, automotive, and healthcare, to enhance the functionality of semiconductor devices.
- Possible Prior Art:**
Prior art may include similar semiconductor device structures with protective layers and supporter patterns, but the specific combination of materials and design elements described in this patent application may be unique.
- Unanswered Questions:**
- 1. What specific manufacturing processes are used to create the layers and patterns in this semiconductor device?**
Answer: The patent application does not provide detailed information on the specific manufacturing processes involved in creating the layers and patterns in the semiconductor device.
- 2. How does the presence of the supporter pattern impact the overall performance of the semiconductor device?**
Answer: The patent application does not elaborate on the specific effects of the supporter pattern on the performance of the semiconductor device.
Original Abstract Submitted
a semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode including an outer protective layer, a conductive layer between opposing sidewalls of the outer protective layer, and an inner protective layer between opposing sidewalls of the conductive layer, a first supporter pattern on a side surface of the lower electrode, the first supporter pattern including a supporter hole, a dielectric layer on a surface of each of the lower electrode and the first supporter pattern, and an upper electrode on the dielectric layer. the outer protective layer includes titanium oxide, the conductive layer includes titanium nitride, and the inner protective layer includes titanium silicon nitride. in a horizontal cross-sectional view, the outer protective layer has an arc shape that extends between the dielectric layer and the conductive layer.
