Samsung electronics co., ltd. (20240136155). PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD simplified abstract

PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD

Organization Name

samsung electronics co., ltd.

Inventor(s)

Changho Kim of Suwon-si (KR)

Hyeongmo Kang of Suwon-si (KR)

Illsang Ko of Suwon-si (KR)

Dooyoung Gwak of Suwon-si (KR)

Kyungsun Kim of Suwon-si (KR)

Namkyun Kim of Suwon-si (KR)

Yirop Kim of Suwon-si (KR)

Jihwan Kim of Suwon-si (KR)

Seungbo Shim of Suwon-si (KR)

Minyoung Hur of Suwon-si (KR)

PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136155 titled 'PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD

Simplified Explanation

The patent application describes a method for controlling plasma in a chamber during an etching process on a wafer by applying radio frequency (rf) power and a second voltage at different frequencies.

• The method involves applying gas to a chamber with a wafer, generating plasma with rf power at a first frequency and a second voltage at a lower frequency, then cutting off the rf power and continuously applying the second voltage for a specific time before turning both off and performing the etching process.
• The rf power is a sine wave, while the second voltage is a square wave of periodic pulse form.

Potential Applications

This technology can be applied in semiconductor manufacturing processes, specifically in plasma etching for microelectronics fabrication.

Problems Solved

This method helps control the plasma generation process more precisely, leading to improved etching accuracy and uniformity on the wafer surface.

Benefits

- Enhanced control over plasma generation - Improved etching precision and uniformity - Potential for increased efficiency in semiconductor manufacturing processes

Potential Commercial Applications

"Optimizing Plasma Control Method for Semiconductor Etching Processes"

Possible Prior Art

One possible prior art could be the use of different waveforms for plasma generation in semiconductor manufacturing processes.

How does this method compare to traditional plasma control techniques in terms of etching quality and efficiency?

The article does not provide a direct comparison between this method and traditional plasma control techniques in terms of etching quality and efficiency. Further research or testing may be needed to evaluate the performance differences between the two approaches.

Are there any limitations or drawbacks to using this method in semiconductor manufacturing processes?

The article does not mention any limitations or drawbacks associated with using this method in semiconductor manufacturing processes. It would be important to investigate any potential challenges or constraints that may arise when implementing this technology on a larger scale.

Original Abstract Submitted

provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (rf) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the rf power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the rf power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the rf power and the second voltage after the third time elapses, wherein the rf power is a sine wave, and the second voltage is a square wave of a periodic pulse form.