Samsung electronics co., ltd. (20240133673). SEMICONDUCTOR MEASUREMENT APPARATUS simplified abstract

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SEMICONDUCTOR MEASUREMENT APPARATUS

Organization Name

samsung electronics co., ltd.

Inventor(s)

Garam Choi of Suwon-si (KR)

Wookrae Kim of Suwon-si (KR)

Jinseob Kim of Suwon-si (KR)

Jinyong Kim of Suwon-si (KR)

Sungho Jang of Suwon-si (KR)

Younguk Jin of Suwon-si (KR)

Daehoon Han of Suwon-si (KR)

SEMICONDUCTOR MEASUREMENT APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240133673 titled 'SEMICONDUCTOR MEASUREMENT APPARATUS

Simplified Explanation

A semiconductor measurement apparatus includes an illumination unit, an image sensor, an optical unit, and a control unit. The illumination unit irradiates light to the sample, while the image sensor receives light reflected from the sample and outputs multiple interference images representing interference patterns of polarization components of light. The optical unit, in the path through which the image sensor receives light, includes an objective lens above the sample. The control unit processes the multi-interference image to obtain measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit can determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.

  • Illumination unit irradiates light to the sample
  • Image sensor receives light reflected from the sample and outputs multiple interference images
  • Optical unit includes an objective lens above the sample
  • Control unit processes the multi-interference image to obtain measurement parameters
  • Measurement parameters are determined from the polarization components at different azimuth angles
  • Selected critical dimension is determined based on measurement parameters
  • Polarizer and compensator with a ¼ wave plate may be included in the illumination unit and/or the optical unit
      1. Potential Applications

- Semiconductor manufacturing - Quality control in semiconductor industry - Research and development in optics and materials science

      1. Problems Solved

- Accurate measurement of critical dimensions in semiconductor samples - Efficient analysis of interference patterns in polarization components of light - Enhanced control and optimization of semiconductor manufacturing processes

      1. Benefits

- Improved accuracy and precision in semiconductor measurements - Increased efficiency in quality control processes - Facilitates research and development in optics and materials science

      1. Potential Commercial Applications
        1. Optimizing Semiconductor Manufacturing Processes with Advanced Measurement Technology
      1. Possible Prior Art

No known prior art at this time.

        1. Unanswered Questions
        1. How does this technology compare to traditional semiconductor measurement methods?

This technology offers higher accuracy and precision compared to traditional methods, allowing for more detailed and reliable measurements of critical dimensions in semiconductor samples.

        1. What are the limitations of this semiconductor measurement apparatus?

One potential limitation could be the complexity of the system, which may require specialized training for operators to use effectively. Additionally, the cost of implementing this technology could be a barrier for some companies.


Original Abstract Submitted

a semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. the control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. the illumination unit and/or the optical unit may include a polarizer and a compensator having a � wave plate.