Samsung electronics co., ltd. (20240130126). NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE simplified abstract
Contents
- 1 NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Yeong Dong Mun of Suwon-si (KR)
Seong Hun Park of Suwon-si (KR)
Seong Jin Kim of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130126 titled 'NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The patent application describes a non-volatile memory device with a unique through-contact structure, including gate electrodes, mold insulating films, and a channel structure.
- The device includes a substrate with a mold structure on top, gate electrodes, and mold insulating films stacked alternately.
- An interlayer insulating film covers the mold structure, with a channel structure on one area connected to the gate electrodes.
- A through-contact on another area extends through the interlayer insulating film, with a first portion in a trench filled with a multi-grain conductive material and a second portion with a single grain conductive material.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- Semiconductor manufacturing
- Integrated circuits
Problems Solved
This technology helps address issues related to:
- Memory device miniaturization
- Improving data storage efficiency
- Enhancing device performance and reliability
Benefits
The benefits of this technology include:
- Increased memory density
- Enhanced device speed
- Improved data retention capabilities
Potential Commercial Applications
"Advanced Through-Contact Structure for Non-Volatile Memory Devices" could be used in:
- Consumer electronics
- Data storage devices
- Automotive electronics
Possible Prior Art
There may be prior art related to through-contact structures in memory devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does the through-contact structure impact overall device performance?
The abstract does not provide details on the specific effects of the through-contact structure on the device's performance metrics such as speed, power consumption, or data retention.
What manufacturing processes are required to implement this through-contact structure?
The abstract does not mention the specific manufacturing techniques or processes needed to create the unique through-contact structure described in the patent application.
Original Abstract Submitted
a non-volatile memory device including a substrate including a first area and a second area, a mold structure on the substrate, the mold structure including gate electrodes and mold insulating films alternately stacked on each other in a stepwise manner, an interlayer insulating film covering the mold structure, a channel structure on the first area, the channel structure extending through the mold structure and connected to the gate electrodes, and a through-contact on the second area and extending through the interlayer insulating film, the through-contact including a first portion in a first trench and a second portion in a second trench, the first portion including a liner film along a sidewall and a bottom surface of the first trench and a filling film on the liner film, wherein the filling film being a multi-grain conductive material, and the second portion being a single grain conductive material, may be provided.
