Samsung electronics co., ltd. (20240130122). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130122 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
A three-dimensional semiconductor memory device includes a substrate, a stack with interlayer insulating layers and gate electrodes stacked alternately on the substrate, a dummy pad on a pad portion of each gate electrode, a source structure between the substrate and the stack, and first vertical channel structures penetrating the stack and the source structure.
- The device features pad portions with a first pad portion vertically overlapped with the dummy pad and a second pad portion horizontally overlapped with the dummy pad.
- The first and second pad portions are spaced apart from the dummy pad, with an interlayer insulating layer interposed between the first pad portion and the dummy pad.
- The interlayer insulating layer extends continuously from a first portion to a second portion via a connection portion.
Potential Applications
The technology can be applied in advanced semiconductor memory devices, improving performance and efficiency.
Problems Solved
This innovation addresses the challenges of increasing memory density and enhancing data storage capabilities in semiconductor devices.
Benefits
The benefits of this technology include higher memory capacity, faster data access speeds, and improved overall performance of semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology include the manufacturing of high-density memory modules for various electronic devices.
Possible Prior Art
One possible prior art for this technology could be the development of three-dimensional memory structures with similar vertical channel structures and interlayer insulating layers.
Unanswered Questions
1. How does this technology compare to existing semiconductor memory devices in terms of data storage capacity? 2. What specific manufacturing processes are required to implement this innovation in commercial semiconductor production?
Original Abstract Submitted
a three-dimensional semiconductor memory device may include a substrate, a stack including interlayer insulating layers and gate electrodes alternatingly stacked on the substrate, a dummy pad on a pad portion of each gate electrode, a source structure between the substrate and the stack, and first vertical channel structures that penetrate the stack and the source structure. the pad portions may include a first pad portion vertically overlapped with the dummy pad and a second pad portion horizontally overlapped with the dummy pad. the first and second pad portions may be spaced apart from the dummy pad, and one of the interlayer insulating layers may be interposed between the first pad portion and the dummy pad. the one of the interlayer insulating layers may extend continuously from a first portion to a second portion via a connection portion.
