Samsung electronics co., ltd. (20240130118). SEMICONDUCTOR MEMORY DEVICE simplified abstract

SEMICONDUCTOR MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jongmin Kim of Suwon-si (KR)

Chansic Yoon of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130118 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The semiconductor memory device described in the abstract includes a substrate with active regions in a memory cell region and a logic active region in a peripheral circuit region, word lines, bit line structure, and gate lines.

• Substrate with active regions:

 - The substrate contains multiple active regions in the memory cell region and at least one logic active region in the peripheral circuit region.

• Word line and bit line structure:

 - The word line extends horizontally across the active regions, while the bit line structure extends in a perpendicular direction and includes a bit line, cover insulating structure, and insulating capping structure.

• Gate line:

 - The gate line is located on the logic active region of the substrate.

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1. 1. 1. Potential Applications

The technology described in this patent application could be applied in various semiconductor memory devices, such as DRAM, SRAM, and flash memory.

1. 1. 1. Problems Solved

This technology helps improve the performance and efficiency of semiconductor memory devices by optimizing the layout and structure of the active regions, word lines, bit lines, and gate lines.

1. 1. 1. Benefits

- Enhanced memory cell performance - Increased data storage capacity - Improved reliability and durability of the memory device

1. 1. 1. Potential Commercial Applications

Optimizing the layout and structure of semiconductor memory devices can lead to advancements in consumer electronics, data storage systems, and computing devices.

1. 1. 1. Possible Prior Art

One possible prior art in semiconductor memory devices is the use of similar structures and layouts to improve memory cell performance and efficiency.

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1. 1. Unanswered Questions

1. 1. 1. How does this technology impact power consumption in semiconductor memory devices?

This article does not delve into the specific details of power consumption and efficiency improvements resulting from the described technology.

1. 1. 1. Are there any limitations or drawbacks to implementing this technology in semiconductor memory devices?

The article does not address any potential limitations or drawbacks that may arise from the implementation of this technology.

Original Abstract Submitted

a semiconductor memory device is provided. the semiconductor memory device includes: a substrate including a plurality of active regions in a memory cell region and at least one logic active region in a peripheral circuit region; a word line extending in a first horizontal direction on the plurality of active regions; a bit line structure extending in a second horizontal direction orthogonal to the first horizontal direction, on the plurality of active regions, and including a bit line, a cover insulating structure on a side surface of an end of the bit line, and an insulating capping structure on the bit line and the cover insulating structure; and a gate line on the at least one logic active region