Samsung electronics co., ltd. (20240130116). SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Junhyeok Ahn of Suwon-si (KR)

Sohyun Park of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130116 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a substrate with an active region, a bit line structure, a bit line contact, and a storage node contact. The storage node contact has a unique design with vertical and horizontal extension portions.

  • The semiconductor device has a substrate with an active region.
  • It features a bit line structure on the substrate, extending in one direction.
  • A bit line contact electrically connects a first impurity region of the active region and the bit line structure.
  • A storage node contact is disposed on a sidewall of the bit line structure, electrically connected to a second impurity region of the active region.
  • The storage node contact includes a vertical extension portion in a vertical direction and a horizontal extension portion in a horizontal direction.

Potential Applications

The technology described in this patent application could be applied in:

  • Memory devices
  • Integrated circuits
  • Semiconductor manufacturing

Problems Solved

This technology helps in:

  • Improving connectivity in semiconductor devices
  • Enhancing performance and efficiency of memory devices

Benefits

The benefits of this technology include:

  • Increased data storage capacity
  • Enhanced speed and reliability of semiconductor devices
  • Improved overall performance of integrated circuits

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Telecommunications
  • Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

  • Existing semiconductor devices with different storage node contact designs

Unanswered Questions

How does this technology compare to existing storage node contact designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing storage node contact designs to evaluate performance and efficiency.

Are there any limitations or challenges in implementing this technology on a larger scale in semiconductor manufacturing?

The article does not address any potential limitations or challenges in scaling up the implementation of this technology in semiconductor manufacturing processes.


Original Abstract Submitted

a semiconductor device includes a substrate having an active region; a bit line structure on the substrate and extending in one direction; a bit line contact electrically connecting a first impurity region of the active region and the bit line structure; and a storage node contact disposed on a sidewall of the bit line structure and electrically connected to a second impurity region of the active region, wherein the storage node contact includes a vertical extension portion extending in a vertical direction, perpendicular to an upper surface of the substrate, and a horizontal extension portion integrally connected to the vertical extension portion and extending in a horizontal direction, parallel to the upper surface of the substrate.