Samsung electronics co., ltd. (20240130112). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130112 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the abstract includes a substrate with an active region, a word line, a bit line, a pad, and a bit line contact, all arranged in specific configurations to optimize performance.
- The device has a substrate with an active region defined by device separation regions.
- A word line is located on the substrate in a word line trench extending in a first horizontal direction.
- A bit line is positioned on the word line, extending in a second horizontal direction orthogonal to the first.
- A pad on the active region has a larger horizontal width than the active region itself.
- A bit line contact electrically connects the bit line to the active region, with the lowermost surface of the additional pad at the same vertical level as the lowermost surface of the bit line contact.
Potential Applications
This technology could be applied in the development of advanced memory devices, such as DRAM or flash memory, to improve performance and efficiency.
Problems Solved
This innovation helps in optimizing the layout and design of integrated circuit devices, enhancing their functionality and reliability.
Benefits
The integrated circuit device offers improved electrical connectivity, reduced signal interference, and overall enhanced performance.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for manufacturing high-performance memory devices, leading to faster and more reliable electronic products.
Possible Prior Art
One possible prior art could be the use of similar configurations in memory devices to improve signal integrity and performance.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of performance and efficiency?
This technology offers improved electrical connectivity and reduced signal interference, but further testing and comparison with existing designs are needed to determine its overall performance and efficiency benefits.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The integration of this technology into mass production processes may face challenges related to scalability, cost-effectiveness, and compatibility with existing manufacturing equipment. Further research and development are required to address these potential obstacles.
Original Abstract Submitted
provided is an integrated circuit device including a substrate that has an active region defined by a plurality of device separation regions, a word line on the substrate and arranged in a word line trench that extends in a first horizontal direction, a bit line on the word line and extending in a second horizontal direction orthogonal to the first horizontal direction, a pad on the active region and having a horizontal width that is larger than the active region, and a bit line contact electrically connecting the bit line to the active region, wherein a level of a lowermost surface of the additional pad is at a same vertical level as a level of a lowermost surface of the bit line contact.
