Samsung electronics co., ltd. (20240130108). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Euichul Jeong of Suwon-si (KR)
Sang-Woon Lee of Suwon-si (KR)
Moonyoung Jeong of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130108 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
A semiconductor memory device described in the patent application includes various components such as a substrate, bit line, word lines, back gate electrode, active patterns, contact patterns, and back gate insulating patterns. The back gate insulating patterns consist of different materials with different dielectric constants.
- The semiconductor memory device includes a substrate, bit line, word lines, back gate electrode, active patterns, contact patterns, and back gate insulating patterns.
- The back gate insulating patterns are made of materials with different dielectric constants, with the lower insulating pattern having a greater dielectric constant than the upper insulating pattern.
Potential Applications
This technology could be applied in:
- Semiconductor memory devices
- Integrated circuits
- Electronic devices requiring high-density memory storage
Problems Solved
This technology helps in:
- Improving memory storage capacity
- Enhancing performance and efficiency of semiconductor memory devices
- Reducing power consumption in electronic devices
Benefits
The benefits of this technology include:
- Increased memory storage capacity
- Improved performance and efficiency
- Lower power consumption
- Enhanced reliability and durability of electronic devices
Potential Commercial Applications
This technology could be commercially applied in:
- Consumer electronics
- Computer hardware
- Mobile devices
- Automotive electronics
Possible Prior Art
One possible prior art related to this technology could be the use of different dielectric materials in semiconductor memory devices to improve performance and efficiency.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and reliability?
This article does not provide a direct comparison with existing memory storage solutions in terms of speed and reliability. Further research or testing may be needed to determine the performance differences between this technology and other memory storage solutions.
What are the potential challenges or limitations of implementing this technology in mass production?
The article does not address the potential challenges or limitations of implementing this technology in mass production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that need to be explored further.
Original Abstract Submitted
a semiconductor memory device includes a substrate, a bit line on the substrate, word lines provided on the bit line and spaced apart in a first direction parallel to a top surface of the substrate, a back gate electrode provide between a pair of adjacent word lines among the word lines, active patterns provided between the back gate electrode and the pair of adjacent word lines, contact patterns respectively provided on the active patterns, a first back gate insulating pattern provided between the bit line and the back gate electrode, and a second back gate insulating pattern and a third back gate insulating pattern which are provided on the back gate electrode, where the back gate upper insulating pattern includes a material having a first dielectric constant and the back gate lower insulating pattern includes a material having a second dielectric constant that is greater than the first dielectric constant.
