Samsung electronics co., ltd. (20240130107). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Sungyeon Ryu of Chuncheon-si (KR)

Eunjung Kim of Daegu (KR)

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130107 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application utilizes a supporting pattern to fix upper portions of active patterns during a gap-filling process, reducing the likelihood of the active patterns from being bent or falling. This helps prevent failures and improves the reliability of the semiconductor device.

  • Supporting pattern used to fix upper portions of active patterns
  • Gap-filling process performed to fill region between active patterns
  • Prevention of active patterns from being bent or fallen
  • Reduction of failure in the semiconductor device
  • Improvement of reliability in the semiconductor device

Potential Applications

The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

The technology addresses the issue of active patterns being bent or fallen during the gap-filling process, which can lead to failures in the semiconductor device and reduce its reliability.

Benefits

The use of supporting patterns in the semiconductor device fabrication process helps prevent failures and improves the overall reliability of the device, leading to better performance and longevity.

Potential Commercial Applications

The technology could be valuable in the semiconductor industry for companies involved in the production of advanced electronic devices that require high reliability and performance.

Possible Prior Art

One possible prior art in this field could be the use of sacrificial layers or materials to support active patterns during fabrication processes in semiconductor devices.

What materials are typically used for supporting patterns in semiconductor devices?

Materials such as silicon dioxide, silicon nitride, or other dielectric materials are commonly used for supporting patterns in semiconductor devices.

How does the gap-filling process impact the overall performance of the semiconductor device?

The gap-filling process is crucial in ensuring the proper functioning of the semiconductor device by preventing any gaps or voids between active patterns that could lead to failures or malfunctions.


Original Abstract Submitted

disclosed are a semiconductor device and a method of fabricating the same. in the semiconductor device, a supporting pattern may be used to fix upper portions of active patterns, when a gap-filling process is performed to fill a region between active patterns, and thus, it may be possible to prevent or reduce the likelihood of the active patterns from being bent or fallen. thus, it may be possible to reduce failure of the semiconductor device and/or to improve reliability of the semiconductor device.