Samsung electronics co., ltd. (20240128054). PLASMA CONTROL APPARATUS AND METHOD USING THE SAME simplified abstract
Contents
- 1 PLASMA CONTROL APPARATUS AND METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA CONTROL APPARATUS AND METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PLASMA CONTROL APPARATUS AND METHOD USING THE SAME
Organization Name
Inventor(s)
PLASMA CONTROL APPARATUS AND METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128054 titled 'PLASMA CONTROL APPARATUS AND METHOD USING THE SAME
Simplified Explanation
The patent application describes a plasma control apparatus that includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber. The apparatus also includes a matcher, a first plasma control circuit, a sensor, and an auxiliary RF power source. The first transmission line transfers the RF power adjacent to the center of the plasma chamber, while the second transmission line transfers the RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.
- The apparatus includes a first transmission line and a second transmission line transferring RF power to a plasma chamber.
- A first plasma control circuit is configured to selectively control harmonics of the frequencies.
- A sensor senses the harmonics of the plasma chamber.
- An auxiliary RF power source generates auxiliary RF power to cancel out the sensed harmonics.
Potential Applications
This technology could be applied in plasma processing systems, semiconductor manufacturing, and materials processing industries.
Problems Solved
This technology helps in controlling and canceling out unwanted harmonics in the plasma chamber, leading to improved plasma processing efficiency and quality.
Benefits
The apparatus allows for precise control of harmonics in the plasma chamber, resulting in better process control and product quality. It also helps in reducing interference and improving overall system performance.
Potential Commercial Applications
Potential commercial applications include plasma etching systems, thin film deposition systems, and plasma cleaning systems.
Possible Prior Art
One possible prior art could be the use of matching networks in plasma processing systems to optimize power transfer and efficiency. Another could be the use of sensors to monitor plasma characteristics in real-time.
Unanswered Questions
How does the apparatus handle variations in plasma chamber conditions?
The patent application does not provide details on how the apparatus adapts to changes in plasma chamber conditions such as pressure or temperature.
What is the cost-effectiveness of implementing this technology in existing plasma systems?
The article does not discuss the cost implications of integrating this plasma control apparatus into current plasma processing setups.
Original Abstract Submitted
a plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (rf) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary rf power source disposed on the second transmission line and configured to generate auxiliary rf power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the rf power adjacent to the center of the plasma chamber, and the second transmission line transfers the rf power and the auxiliary rf power and the auxiliary rf power adjacent to an edge of the plasma chamber.
