Samsung electronics co., ltd. (20240127879). MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract
Contents
- 1 MEMORY DEVICE AND OPERATION METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240127879 titled 'MEMORY DEVICE AND OPERATION METHOD THEREOF
Simplified Explanation
The memory device described in the patent application includes a memory cell array with word lines and common source lines, a refresh manager for performing refresh operations, and specific functionalities for handling normal refresh operations and row hammering incidents.
- The memory device has a memory cell array with word lines and common source lines.
- The refresh manager is responsible for executing refresh operations for the memory cell array.
- The refresh manager initializes a count for the row, transmits a refresh command, writes first data during normal refresh operations, and writes second data in a row adjacent to a word line affected by row hammering.
Potential Applications
This technology could be applied in:
- Computer memory systems
- Mobile devices
- Embedded systems
Problems Solved
This technology addresses issues related to:
- Memory cell degradation
- Row hammering incidents
Benefits
The benefits of this technology include:
- Improved memory cell array performance
- Enhanced data reliability
- Extended memory lifespan
Potential Commercial Applications
Potential commercial applications of this technology could be in:
- Memory chip manufacturing
- Electronic device production
- Data center infrastructure
Possible Prior Art
One possible prior art related to this technology is the development of memory refresh techniques in computer systems to prevent data corruption and maintain data integrity.
Unanswered Questions
How does the refresh manager handle different types of memory cell arrays?
The patent application does not provide specific details on how the refresh manager adapts to various memory cell array configurations.
What impact does the writing of second data have on adjacent word lines?
The patent application does not elaborate on the potential consequences of writing second data into rows associated with word lines affected by row hammering.
Original Abstract Submitted
a memory device includes a memory cell array having a plurality of word lines and a plurality of common source lines therein, which constitute a row. a refresh manager is provided, which is configured to perform a refresh operation for the memory cell array. the refresh manager is further configured to: (i) initialize a count for the row of the memory cell array, (ii) transmit a refresh command to the memory cell array, (iii) write first data into the row when the refresh operation for the memory cell array is a normal refresh operation, and (iv) write second data into a row associated with a word line adjacent to a word line in which row hammering has occurred, when the refresh operation for the memory cell array is not a normal refresh operation.