Samsung electronics co., ltd. (20240124979). SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME simplified abstract

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SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Chan Kyu Lim of Suwon-si (KR)

Yoonbon Koo of Suwon-si (KR)

Hanhim Kang of Suwon-si (KR)

Suji Gim of Suwon-si (KR)

Jongkoo Lim of Suwon-si (KR)

SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240124979 titled 'SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME

Simplified Explanation

The present disclosure describes methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. The method involves heating a gas tank and a gas line of the semiconductor manufacturing apparatus using heating devices. The gas tank is then filled with a reaction gas through the gas line. The temperature of the reaction gas in the gas tank is changed using the heating devices. The reaction gas is supplied from the gas tank to a process chamber of the semiconductor manufacturing apparatus, with a portion of the reaction gas being decomposed into different materials.

  • Heating devices are used to heat the gas tank and gas line of the semiconductor manufacturing apparatus.
  • The gas tank is filled with a reaction gas through the gas line.
  • The temperature of the reaction gas in the gas tank is changed using the heating devices.
  • The reaction gas is supplied from the gas tank to a process chamber of the semiconductor manufacturing apparatus.
  • A portion of the reaction gas is decomposed into different materials.

Potential Applications

This technology can be applied in the semiconductor manufacturing industry for supplying process gases efficiently and effectively.

Problems Solved

This technology solves the problem of accurately controlling the temperature of reaction gases in semiconductor manufacturing processes.

Benefits

The benefits of this technology include improved process control, enhanced efficiency in gas supply, and potentially higher quality semiconductor products.

Potential Commercial Applications

One potential commercial application of this technology is in the production of semiconductor devices for various electronic applications.

Possible Prior Art

Prior art in this field may include similar methods and apparatuses for supplying process gases in semiconductor manufacturing processes.

Unanswered Questions

How does this technology compare to existing gas supply methods in semiconductor manufacturing processes?

This article does not provide a direct comparison to existing gas supply methods in semiconductor manufacturing processes.

What are the specific materials that the reaction gas can be decomposed into?

The article does not specify the exact materials that the reaction gas can be decomposed into.


Original Abstract Submitted

the present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. in some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. the method further includes filling, through the gas line, the gas tank with a reaction gas. the method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. the method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. the changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.