Samsung electronics co., ltd. (20240121963). SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121963 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a substrate with a first region containing a peripheral circuit and a first active region (FAR), and a second region containing memory cell blocks. The FAR has extensions in different directions forming an angle greater than 90 degrees, and a first pass transistor circuit is configured to transmit driving signals.
- The semiconductor memory device includes a substrate with distinct regions for peripheral circuit, active region, and memory cell blocks.
- The FAR has extensions in different directions forming an angle greater than 90 degrees.
- The first pass transistor circuit is configured to transmit driving signals.
Potential Applications
This technology could be applied in:
- High-speed data storage devices
- Mobile devices requiring efficient memory management
Problems Solved
This technology helps in:
- Improving memory access speed
- Enhancing data storage efficiency
Benefits
The benefits of this technology include:
- Faster data processing
- Increased memory capacity
- Enhanced overall device performance
Potential Commercial Applications
The potential commercial applications of this technology could be:
- Solid-state drives
- Mobile phones and tablets
Possible Prior Art
One possible prior art for this technology could be the use of multi-directional extensions in semiconductor memory devices for improved performance.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory devices in terms of speed and efficiency. It would be beneficial to have data or studies showing the performance improvements of this technology compared to traditional memory devices.
What are the potential limitations or challenges in implementing this technology on a larger scale?
The article does not address any potential limitations or challenges in implementing this technology on a larger scale. It would be important to consider factors such as manufacturing costs, scalability, and compatibility with existing systems.
Original Abstract Submitted
a semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (far), and the second region includes memory cell blocks. the far includes a far first extension extending in a first direction, a far second extension extending in a second direction, and a far third extension extending in a third direction. the far first extension, the far second extension, and the far third extension form an angle greater than 90 degrees relative to one another. the device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a far first gate structure on the far first extension, a far second gate structure on the far second extension, a far third gate structure on the far third extension, and a first shared source/drain.
