Samsung electronics co., ltd. (20240121958). BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Hyeongwon Choi of Suwon-si (KR)
BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121958 titled 'BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a vertical semiconductor device with a pattern structure and a channel structure, including a first gate electrode serving as a gate electrode of an erase transistor.
- The device includes a pattern structure with insulation patterns and gate electrodes stacked on a substrate.
- The channel structure in a channel hole includes a data storage structure, a first channel, an undoped semiconductor liner, a doped semiconductor pattern, a filling insulation pattern, and a capping pattern.
- The data storage structure, first channel, undoped semiconductor liner, and doped semiconductor pattern are sequentially disposed on a sidewall of the first gate electrode.
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for memory storage, data processing, and communication systems.
Problems Solved
This technology addresses the need for more efficient and compact vertical semiconductor devices with improved performance and reliability.
Benefits
The vertical semiconductor device offers increased data storage capacity, faster data processing speeds, and enhanced overall device functionality.
Potential Commercial Applications
The technology could be utilized in the production of next-generation memory chips, high-performance processors, and advanced communication devices.
Possible Prior Art
One possible prior art for this technology could be the development of vertical semiconductor devices with similar pattern and channel structures in the field of semiconductor manufacturing.
Unanswered Questions
1. How does the vertical semiconductor device compare to traditional horizontal semiconductor devices in terms of performance and efficiency? 2. What specific materials and manufacturing processes are used to create the pattern and channel structures in the device?
Original Abstract Submitted
a vertical semiconductor device includes; a pattern structure including a plurality of insulation patterns and a plurality of gate electrodes that are alternately and repeatedly stacked on a substrate, wherein the pattern structure includes a first gate electrode serving as a gate electrode of an erase transistor, wherein the first gate electrode is one of the plurality of gate electrodes; and a channel structure in a channel hole passing through the pattern structure, wherein the channel structure includes a data storage structure, a first channel, an undoped semiconductor liner, a doped semiconductor pattern, a filling insulation pattern and a capping pattern, wherein the data storage structure, the first channel, the undoped semiconductor liner, and the doped semiconductor pattern are sequentially disposed on a sidewall of the first gate electrode.
