Samsung electronics co., ltd. (20240121957). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Myunghoon Han of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121957 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes a gate electrode structure with gate electrodes spaced apart on a substrate, a memory channel structure extending through the gate electrode structure, a first division pattern on the sidewall of the gate electrode structure, and first support patterns on the first division pattern.
- Gate electrode structure with spaced gate electrodes on a substrate
- Memory channel structure extending through the gate electrode structure
- First division pattern on the sidewall of the gate electrode structure
- First support patterns on the first division pattern
Potential Applications
This technology could be applied in the development of advanced memory devices, such as non-volatile memory or flash memory.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the memory channel structure and support patterns.
Benefits
The benefits of this technology include increased memory capacity, faster data access speeds, and improved overall device reliability.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance memory devices.
Possible Prior Art
One possible prior art could be the use of similar support patterns in semiconductor devices to improve memory channel structures.
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing memory device structures to evaluate performance and reliability differences.
What are the specific manufacturing processes involved in creating the gate electrode structure and support patterns in this semiconductor device?
The article does not delve into the specific manufacturing processes used to create the gate electrode structure and support patterns in this semiconductor device.
Original Abstract Submitted
a semiconductor device includes a gate electrode structure, a memory channel structure, a first division pattern, and first support patterns. the gate electrode structure includes gate electrodes spaced apart from each other on a substrate in a first direction perpendicular to an upper surface of the substrate, and each of the gate electrodes extends in a second direction parallel to the upper surface of the substrate. the memory channel structure extends through the gate electrode structure on the substrate. the first division pattern is formed on a sidewall of the gate electrode structure in a third direction parallel to the upper surface of the substrate and crossing the second direction, and extends in the second direction. the first support patterns are spaced apart from each other in the second direction on the first division pattern, and each of the first support patterns includes a conductive material.
