Samsung electronics co., ltd. (20240120258). INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME
Organization Name
Inventor(s)
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120258 titled 'INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNING THE SAME
Simplified Explanation
The abstract describes an integrated circuit with a cell region containing multiple cells and a peripheral region with a circuit for controlling the cells. The cell region includes first gate lines, first patterns in a wiring layer, second patterns in a backside wiring layer, and first vias passing through the substrate.
- Integrated circuit with cell region and peripheral region
- Cell region includes first gate lines, first patterns, second patterns, and first vias passing through substrate
- First vias connect first patterns to second patterns
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as smartphones, tablets, computers, and other consumer electronics that require integrated circuits for processing and controlling functions.
Problems Solved
This technology solves the problem of efficiently connecting different layers of wiring in an integrated circuit, particularly in the cell region where multiple cells need to be controlled and coordinated.
Benefits
The benefits of this technology include improved performance and reliability of integrated circuits, increased efficiency in signal transmission between different layers, and potentially reduced manufacturing costs.
Potential Commercial Applications
The technology could be valuable for semiconductor companies, electronics manufacturers, and any industry that relies on integrated circuits for their products. A potential commercial application could be in the development of advanced processors for high-performance computing systems.
Possible Prior Art
One possible prior art related to this technology could be the use of through-silicon vias (TSVs) in semiconductor devices to vertically connect different layers of wiring. However, the specific configuration and arrangement of first gate lines, patterns, and vias as described in this patent application may be novel and inventive.
Unanswered Questions
How does this technology impact power consumption in integrated circuits?
The abstract does not provide information on how this technology affects power consumption in integrated circuits. It would be interesting to know if the design improvements described lead to more energy-efficient operation.
Are there any limitations or constraints in implementing this technology in practical applications?
The abstract does not mention any potential limitations or constraints in implementing this technology. Understanding any challenges in practical applications could provide valuable insights into the feasibility and scalability of the innovation.
Original Abstract Submitted
provided is an integrated circuit including a cell region in which a plurality of cells are arranged, and a peripheral region in which a circuit configured to control the plurality of cells is arranged, wherein the cell region further includes a plurality of first gate lines over a substrate, a plurality of first patterns in a first wiring layer above the plurality of first gate lines, a plurality of second patterns extending in a first horizontal direction in a backside wiring layer under the substrate, and a plurality of first vias, each of the plurality of first vias passing through the substrate in a vertical direction, wherein each of the plurality of first vias includes a top surface connected to a respective one of the plurality of first patterns and a bottom surface connected to a respective one of the plurality of second patterns.
