Samsung electronics co., ltd. (20240120199). METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120199 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device, involving several steps such as forming a step key on a substrate, applying a mold layer on the step key, and etching the mold layer using a second mask layer.
- Forming a step key on a substrate
- Applying a mold layer on the step key
- Forming a first mask layer with a metal material
- Creating a transparent layer in the first mask layer
- Etching the mold layer using a second mask layer
Potential Applications
The technology can be applied in the semiconductor industry for the production of advanced semiconductor devices with precise features and structures.
Problems Solved
This method helps in achieving high precision and accuracy in the manufacturing process of semiconductor devices, leading to improved performance and reliability.
Benefits
The benefits of this technology include enhanced efficiency in semiconductor manufacturing, increased yield rates, and the ability to create complex semiconductor structures.
Potential Commercial Applications
The technology can be utilized in the production of various semiconductor devices such as microprocessors, memory chips, and sensors, catering to the growing demand for advanced electronic components.
Possible Prior Art
One possible prior art could be the use of similar mask layers and etching techniques in semiconductor manufacturing processes to achieve specific device structures.
Unanswered Questions
How does this method compare to existing semiconductor manufacturing techniques?
This article does not provide a direct comparison to existing semiconductor manufacturing techniques, leaving the reader to wonder about the specific advantages or differences this method may have.
What are the limitations or challenges of implementing this manufacturing method on a large scale?
The article does not address the potential limitations or challenges that may arise when scaling up this manufacturing method for mass production, leaving room for speculation on the feasibility and practicality of the process.
Original Abstract Submitted
a method for manufacturing a semiconductor device, including forming a step key on a substrate, forming a mold layer on the step key covering the step key, forming a first mask layer on the mold layer, forming a transparent layer in the first mask layer overlapping the step key, forming a second mask layer on the first mask layer and the transparent layer, etching the mold layer using the second mask layer, wherein the first mask layer includes a metal material.
