Samsung electronics co., ltd. (20240119978). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyun Geun Choi of Suwon-si (KR)
Seok Han Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240119978 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes various components such as a gate electrode, a bit line, a cell semiconductor pattern, a capacitor structure, a bit line strapping line, a bit line selection line, and a selection semiconductor pattern. These components work together to store and retrieve data efficiently within the memory device.
- Gate electrode, bit line, cell semiconductor pattern, capacitor structure, bit line strapping line, bit line selection line, and selection semiconductor pattern are key components of the semiconductor memory device.
- The capacitor structure includes a first electrode, a second electrode, and a capacitor dielectric film.
- The bit line strapping line is spaced apart from the bit line and electrically connected to it.
- The selection semiconductor pattern is electrically connected to the bit line, bit line strapping line, and bit line selection line.
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as smartphones, tablets, laptops, and other computing devices that require efficient memory storage and retrieval capabilities.
Problems Solved
This technology solves the problem of efficient data storage and retrieval within semiconductor memory devices, improving overall performance and reliability.
Benefits
The benefits of this technology include faster data access speeds, increased memory capacity, and improved energy efficiency in electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the production of memory chips for consumer electronics, data storage devices, and other semiconductor memory products.
Possible Prior Art
One possible prior art in this field could be the development of similar semiconductor memory devices with capacitor structures and selection semiconductor patterns for data storage and retrieval purposes.
Unanswered Questions
How does this technology compare to existing memory storage solutions on the market?
This article does not provide a direct comparison to existing memory storage solutions, leaving the reader to wonder about the competitive advantages of this technology.
What are the potential limitations or drawbacks of implementing this technology in electronic devices?
The article does not address any potential limitations or drawbacks of implementing this technology, leaving room for further exploration into its practical implications.
Original Abstract Submitted
provided a semiconductor memory device. the semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode electrically connected to the cell semiconductor pattern, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line strapping line spaced apart from the bit line in the second direction, and electrically connected to the bit line, a bit line selection line between the bit line and the bit line strapping line, and a selection semiconductor pattern between the bit line and the bit line strapping line and electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.
