Samsung electronics co., ltd. (20240114704). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Joonyoung Kwon of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114704 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a peripheral circuit structure and a cell array structure. The cell array structure includes a second substrate, a stack, insulating layers, dummy plugs, and bonding pads.
- Peripheral circuit structure on the first substrate
- Cell array structure on the peripheral circuit structure
- Stack interposed between the peripheral circuit structure and the second substrate
- Dummy plug penetrating the first insulating layer
- Second insulating layer on the dummy plug
- Second bonding pads connected to the dummy plug
- Electrical connection between first and second bonding pads
- Top surface of the dummy plug contacts the second insulating layer
Potential Applications
The technology can be applied in:
- High-density memory devices
- Advanced computing systems
- Data storage solutions
Problems Solved
This technology addresses:
- Increasing demand for higher memory capacity
- Improving data processing speed
- Enhancing overall system performance
Benefits
The benefits of this technology include:
- Increased memory storage capacity
- Faster data access and retrieval
- Improved efficiency in computing tasks
Potential Commercial Applications
This technology can be utilized in:
- Consumer electronics
- Cloud computing infrastructure
- Data centers
Possible Prior Art
One possible prior art for this technology is the use of dummy plugs in semiconductor memory devices to improve electrical connections and signal integrity.
Unanswered Questions
How does this technology compare to traditional two-dimensional memory devices in terms of performance and efficiency?
This technology offers higher memory density and potentially faster data processing speeds compared to traditional two-dimensional memory devices. However, further testing and analysis would be needed to provide a detailed comparison of performance and efficiency between the two types of memory devices.
What are the potential challenges in scaling up this technology for mass production and commercialization?
Scaling up this technology for mass production and commercialization may face challenges related to manufacturing processes, cost-effectiveness, and compatibility with existing systems. Further research and development efforts would be required to address these challenges and ensure successful implementation in the market.
Original Abstract Submitted
a three-dimensional semiconductor memory device may include a first substrate, a peripheral circuit structure on the first substrate, the peripheral circuit structure including first bonding pads in an upper portion of the peripheral circuit structure, and a cell array structure on the peripheral circuit structure. the cell array structure may include a second substrate, a stack interposed between the peripheral circuit structure and the second substrate, a first insulating layer enclosing the stack, a dummy plug penetrating the first insulating layer, a second insulating layer on the dummy plug, and second bonding pads interposed between the stack and the peripheral circuit structure and connected to the dummy plug. the first bonding pads may contact the second bonding pads, and the dummy plug may be electrically connected to the first bonding pads and the second bonding pads. a top surface of the dummy plug may contact the second insulating layer.
