Samsung electronics co., ltd. (20240114677). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyeoung-won Seo of Yongin-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114677 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a gate trench, gate structure, gate dielectric film, and insulating barrier film to improve the performance and efficiency of the device.
- The device has a substrate with active regions and a device isolation region for electrical isolation.
- A gate trench extends across the active regions and isolation region.
- Gate structures are formed in the gate trench along the sidewalls of the active regions.
- A gate dielectric film is present between the gate trench and gate structure in each active region.
- Insulating barrier films are provided under the gate trench in each active region, spaced apart from the lower surface of the gate trench.
Potential Applications
The technology described in the patent application can be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Power electronics
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving efficiency
- Ensuring electrical isolation between active regions
Benefits
The benefits of this technology include:
- Higher device reliability
- Increased speed and efficiency
- Better control over electrical isolation
Potential Commercial Applications
Potential commercial applications of this technology include:
- Consumer electronics
- Automotive electronics
- Telecommunications
Possible Prior Art
Prior art related to this technology may include:
- Insulating barrier films in semiconductor devices
- Gate structures in active regions
- Device isolation techniques
What are the specific materials used in the insulating barrier film?
The specific materials used in the insulating barrier film are not mentioned in the abstract. Further details may be provided in the full patent application.
How does the gate dielectric film contribute to the overall performance of the device?
The gate dielectric film helps in reducing leakage currents and improving the gate control of the device, ultimately enhancing its performance.
Original Abstract Submitted
a semiconductor device includes a substrate comprising a plurality of active regions extending in a first direction and a device isolation region electrically isolating the plurality of active regions, a gate trench extending across the plurality of active regions and the device isolation region, a gate structure extending in the gate trench of each of and along opposite sidewalls of the plurality of active regions, a gate dielectric film formed between the gate trench and the gate structure in each of the plurality of active regions, and an insulating barrier film provided in each of the plurality of active regions under the gate trench spaced apart from a lower surface of the gate trench and extending in an extension direction of the gate trench.
