Samsung electronics co., ltd. (20240114676). INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME simplified abstract

INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Taejin Park of Yongin-si (KR)

Taehoon Kim of Seoul (KR)

Kyujin Kim of Seoul (KR)

Chulkwon Park of Hwaseong-si (KR)

Sunghee Han of Hwaseong-si (KR)

Yoosang Hwang of Yongin-si (KR)

INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114676 titled 'INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINES THEREIN AND METHODS OF FORMING THE SAME

Simplified Explanation

The integrated circuit device described in the patent application includes a substrate with a word line trench, a word line, gate insulation layer, electrically insulating gate capping layer, and insulation liner. Here are the key points explained in bullet form:

• The word line trench has a lower portion with a smaller width and an upper portion with a larger width.
• The word line extends in and adjacent to the bottom of the word line trench.
• The gate insulation layer extends between the word line and the sidewalls of the lower portion of the word line trench.
• An electrically insulating gate capping layer is provided in the upper portion of the word line trench.
• An insulation liner extends between the gate capping layer and the sidewalls of the upper portion of the word line trench.
• The gate insulation layer extends between the insulation liner and a portion of the gate capping layer within the upper portion of the word line trench.

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1. 1. 1. Potential Applications of this Technology

• Memory devices
• Microprocessors
• Logic circuits

1. 1. 1. Problems Solved by this Technology

• Improved performance of integrated circuits
• Enhanced reliability of memory devices
• Increased efficiency of microprocessors

1. 1. 1. Benefits of this Technology

• Higher integration density
• Lower power consumption
• Faster data processing speeds

1. 1. 1. Potential Commercial Applications of this Technology
         1. Enhancing Semiconductor Devices for Improved Performance

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1. 1. 1. Possible Prior Art

There may be prior art related to the integration of gate insulation layers and electrically insulating gate capping layers in word line trenches in semiconductor devices. Further research is needed to identify specific examples of prior art in this field.

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1. 1. 1. 1. Unanswered Questions
            1. How does this technology compare to existing methods for fabricating integrated circuits?

The article does not provide a direct comparison to existing methods for fabricating integrated circuits. Further research and analysis would be needed to determine the advantages and disadvantages of this technology in comparison to current practices.

1. 1. 1. 1. 1. What specific manufacturing processes are required to implement this technology?

The article does not delve into the specific manufacturing processes needed to implement this technology. Understanding the detailed steps and techniques involved in the fabrication of integrated circuits using this innovation would be crucial for practical application.

Original Abstract Submitted

an integrated circuit device includes a substrate having an active region and a word line trench therein. the word line trench includes a lower portion having a first width, and an upper portion, which extends between the lower portion and a surface of the substrate and has a second width that is greater than the first width. a word line is provided, which extends in and adjacent a bottom of the word line trench. a gate insulation layer is provided, which extends between the word line and sidewalls of the lower portion of the word line trench. an electrically insulating gate capping layer is provided in the upper portion of the word line trench. an insulation liner is provided, which extends between the gate capping layer and sidewalls of the upper portion of the word line trench. the gate insulation layer extends between the insulation liner and a portion of the gate capping layer, which extends within the upper portion of the word line trench.