Samsung electronics co., ltd. (20240114674). SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Chang Sik Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114674 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with first and second channel patterns on a bit-line, first and second word-lines, and capacitors connected to the channel patterns. The first and second channel patterns consist of different compositions of metal oxide patterns.
- The semiconductor memory device has a substrate with a bit-line extending in a first direction.
- First and second channel patterns are located on the bit-line, with the second pattern spaced apart from the first pattern.
- A first word-line intersects the first direction and is positioned between the first and second channel patterns.
- A second word-line is also between the first and second channel patterns, spaced apart from the first word-line in the first direction.
- Capacitors are present on and connected to the channel patterns, providing storage capabilities.
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as DRAMs, SRAMs, and flash memory.
Problems Solved
This innovation solves the problem of increasing memory density while maintaining performance and reliability in semiconductor memory devices.
Benefits
The benefits of this technology include improved memory storage capacity, enhanced performance, and increased reliability in semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology include the manufacturing of high-density and high-performance semiconductor memory devices for use in consumer electronics, computers, and data storage systems.
Possible Prior Art
One possible prior art for this technology could be the use of different metal oxide compositions in semiconductor memory devices to enhance performance and storage capacity.
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and reliability?
This article does not provide a direct comparison between this technology and existing memory device structures in terms of performance and reliability.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This article does not address the potential challenges in implementing this technology on a large scale for commercial production.
Original Abstract Submitted
a semiconductor memory device includes a substrate; a bit-line on the substrate and extending in a first direction; first and second channel patterns on the bit-line; the second channel pattern being spaced apart from the first channel pattern in the first direction; a first word-line between the first and second channel patterns and extending in a second direction that intersects the first direction; a second word-line between the first and second channel patterns, extending in the second direction, and being spaced apart from the first word-line in the first direction; capacitors on and connected to the channel patterns; wherein the first and second channel patterns include first and second metal oxide patterns sequentially on the bit-line, each of the first and second metal oxide patterns include an amorphous metal oxide, and a composition of the first metal oxide pattern is different from a composition of the second metal oxide pattern.
