SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113020 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a first semiconductor structure with circuit elements on a first substrate, a lower interconnection structure connected to the circuit elements, and a peripheral region insulating layer. The device also includes a second semiconductor structure with a second substrate on the first substrate, a first stack structure with first and second gate electrodes, interlayer insulating layers, first and second contact plugs, and contact plug insulating layers.

Explanation of the patent/innovation:

 * The semiconductor device comprises two semiconductor structures with different components and layers.
 * The first semiconductor structure contains circuit elements and interconnection structures.
 * The second semiconductor structure includes gate electrodes, contact plugs, and insulating layers.
 * The second semiconductor structure also features a capacitor structure with gate electrodes and contact plugs.

Potential Applications

The technology described in the patent application could be applied in:

Advanced semiconductor devices
Integrated circuits
Memory devices

Problems Solved

This technology addresses issues related to:

Circuit element integration
Interconnection efficiency
Capacitor structure design

Benefits

The benefits of this technology include:

Improved semiconductor device performance
Enhanced circuit element functionality
Increased integration capabilities

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

Electronics manufacturing
Semiconductor industry
Research and development in semiconductor devices

Possible Prior Art

One possible prior art for this technology could be:

Semiconductor devices with similar structures and components
Previous patents related to integrated circuits and memory devices

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

What are the specific manufacturing processes involved in creating this semiconductor device?

The article does not detail the specific manufacturing processes used to create this semiconductor device.

Original Abstract Submitted

a semiconductor device includes a first semiconductor structure including circuit elements on a first substrate, a lower interconnection structure connected to the circuit elements, and a peripheral region insulating layer covering the circuit elements; and a second semiconductor structure including a second substrate on the first substrate, a first stack structure including first and second gate electrodes spaced apart from each other and stacked on the second substrate, interlayer insulating layers alternately stacked with the first and second gate electrodes, first and second contact plugs passing through the first and second gate electrodes, and contact plug insulating layers alternately disposed with the interlayer insulating layers and surrounding the contact plugs. the second semiconductor structure includes a first capacitor structure including the first gate electrode, a contact plug insulating layer(s), and the second contact plug, or the second gate electrode, a contact plug insulating layer(s), and the first contact plug.

Samsung electronics co., ltd. (20240113020). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract

Contents

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Organization Name

Inventor(s)