Samsung electronics co., ltd. (20240112915). METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112915 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of fabricating a semiconductor device by implementing a desired mask pattern without the need for an exposure process on different regions of a substrate. This is achieved by forming line patterns at different intervals on the different regions and applying a double patterning process to these line patterns.
- Plurality of line patterns formed on different regions of a substrate
- Double patterning process applied to the line patterns
- Increased product reliability and manufacturing economic feasibility of semiconductor devices
Potential Applications
The technology described in this patent application could be applied in the manufacturing of various semiconductor devices such as microprocessors, memory chips, and sensors.
Problems Solved
This technology solves the problem of needing to perform an exposure process on different regions of a substrate to implement a desired mask pattern, thus reducing manufacturing complexity and cost.
Benefits
The benefits of this technology include increased product reliability, improved manufacturing economic feasibility, and simplified fabrication processes for semiconductor devices.
Potential Commercial Applications
A potential commercial application of this technology could be in the semiconductor industry for the production of advanced electronic devices with complex mask patterns.
Possible Prior Art
One possible prior art in this field could be the use of traditional exposure processes for implementing mask patterns on semiconductor devices. However, the method described in this patent application offers a novel approach by utilizing line patterns and a double patterning process.
What are the specific line patterns used in this method?
The specific line patterns used in this method are formed at different intervals on the different regions of the substrate to achieve the desired mask pattern without the need for additional exposure processes.
How does the double patterning process contribute to the increased product reliability of semiconductor devices?
The double patterning process ensures that the mask pattern is accurately transferred onto the substrate, resulting in precise alignment and reduced chances of defects, thus contributing to the increased product reliability of semiconductor devices.
Original Abstract Submitted
a method of fabricating a semiconductor device may implement a desired mask pattern even without additionally performing an exposure process on any one of different regions of a substrate by forming a plurality of line patterns disposed at different intervals on the different regions, respectively, and applying a double patterning process to the plurality of line patterns. such a method may increase product reliability and manufacturing economic feasibility of a semiconductor device.
