Samsung electronics co., ltd. (20240112719). MEMORY DEVICES, MEMORY SYSTEMS HAVING THE SAME AND OPERATING METHODS THEREOF simplified abstract

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MEMORY DEVICES, MEMORY SYSTEMS HAVING THE SAME AND OPERATING METHODS THEREOF

Organization Name

samsung electronics co., ltd.

Inventor(s)

Taewon Kim of Suwon-si (KR)

MEMORY DEVICES, MEMORY SYSTEMS HAVING THE SAME AND OPERATING METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112719 titled 'MEMORY DEVICES, MEMORY SYSTEMS HAVING THE SAME AND OPERATING METHODS THEREOF

Simplified Explanation

The memory device described in the patent application includes registers for storing row addresses and access counts, as well as a target row refresh controller. The controller selects target row addresses based on the access counts and performs refresh operations on adjacent row addresses.

  • Registers store row addresses and access counts
  • Target row refresh controller selects target row addresses based on access counts
  • Refresh operations are performed on adjacent row addresses

Potential Applications

This technology could be applied in various memory devices such as RAM, SSDs, and other storage systems where efficient refresh operations are necessary.

Problems Solved

1. Efficient management of memory refresh operations 2. Preventing data loss due to memory degradation

Benefits

1. Improved memory performance 2. Extended lifespan of memory devices 3. Enhanced data reliability

Potential Commercial Applications

Optimizing memory refresh operations in servers, data centers, and other computing systems to improve overall performance and reliability.

Possible Prior Art

Prior art may include existing memory management techniques and refresh algorithms used in memory devices.

Unanswered Questions

How does this technology impact power consumption in memory devices?

The abstract does not provide information on the power consumption implications of the described memory device.

What are the potential limitations of the random selection of target row addresses?

The abstract does not address any potential drawbacks or limitations of the random selection process for target row addresses.


Original Abstract Submitted

a memory device includes first registers configured to store row addresses second registers configured to store an access count of each of the row addresses and generate a reference value flag signal when the access count is higher than a reference value. the memory device also includes a target row refresh controller configured to select one of the row addresses as a first target row address in response to the reference value flag signal, perform a first refresh operation on at least one first row address adjacent to the first target row address, randomly select one of the row addresses as a second target row address, and perform a second refresh operation on at least one second address adjacent to the second target row address. the second refresh operation may be performed when the reference value flag signal indicates that the access count is not greater than the reference value.