Samsung electronics co., ltd. (20240112716). MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract
Contents
- 1 MEMORY DEVICE AND OPERATION METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
Seung-jun Lee of Suwon-si (KR)
MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112716 titled 'MEMORY DEVICE AND OPERATION METHOD THEREOF
Simplified Explanation
The memory device described in the abstract includes multiple banks that perform a per-bank refresh operation, with an address register providing a single row address signal to two banks simultaneously. The two banks share the single row address signal and activate a word line of each memory cell array based on a single decoded row address signal.
- Two banks perform per-bank refresh operation simultaneously
- Address register provides single row address signal to two banks
- Single row address signal is shared by the two banks
- Word line activation based on single decoded row address signal
Potential Applications
This technology could be applied in:
- High-speed memory systems
- Data centers
- Embedded systems
Problems Solved
This technology helps in:
- Improving memory access speed
- Enhancing memory efficiency
- Simplifying memory management
Benefits
The benefits of this technology include:
- Faster data retrieval
- Increased memory performance
- Reduced power consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Computer hardware manufacturing
- Semiconductor industry
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Memory devices with per-bank refresh operations
Unanswered Questions
How does this technology compare to traditional memory devices?
This technology offers faster memory access and improved efficiency compared to traditional memory devices.
What impact could this technology have on the semiconductor industry?
This technology could revolutionize memory systems in the semiconductor industry, leading to faster and more efficient devices.
Original Abstract Submitted
a memory device includes plural banks that perform a per-bank refresh (pbr) operation, and an address register that provides a single row address signal to two banks of the plural banks, the two banks simultaneously performing the pbr operation and the single row address signal being shared by the two banks. the two banks activate a word line of each memory cell array based on a single decoded row address signal that is generated based on the single row address signal.
